Exposure apparatus

专利摘要:
There is provided an exposure apparatus comprising a first substrate holder, a second substrate holder, a sensor holder, a projection system, a measurement device and a further measurement device. The first substrate holder is configured to hold a substrate. The second substrate holder is configured to hold the substrate. The sensor holder is configured to hold a sensor. The projection system is configured to expose the substrate with an exposure beam. The measurement device is configured to provide measurement information of the substrate. The further measurement device is configured to provide further measurement information of the substrate. The sensor is configured to measure a property of the exposure beam and/or the projection system. The projection system is configured to expose the sensor with the exposure beam.
公开号:NL2020344A
申请号:NL2020344
申请日:2018-01-30
公开日:2018-08-14
发明作者:Kanehara Junichi
申请人:Asml Netherlands Bv；
IPC主号:

专利说明:

ΙίΠΙ1.Τ.^<)ΓΤΒΕ.ΙΝ/ΈΝΤΙΟ.Ν [80fj The present invention relates to an exposure apparatus.
S iiACKGROyNp.AKT [002] A lithographic apparatus is a rnuch-nc that applies a desired put tern onto a substrate, na;dly onto a target portion of the substrate, A lithographic apparatus can be used, for example, In rise manufacture of integrated circuit» (I€s.». In that instance, a patterning device, which is alternatively refetred to as a mask or tO a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the 1C. This pattern can be transferred onto «target, portion (e.g. comprising part of. one, or several dies} on a substrate (e.g. a silicon wafers. Transfer of the pattern is typically via imaging onto a layer of radiation-sensitive material (resist} provided on the substrate. I» general, a rlngis substrate will contain a network of adjacent target portions that are successively patterned. Known lithographic apparatus include so-called steppers, In which cad's target portion Is irradiated by exposing an entire pattens onto the target portion at one time, and «o-called sseaunets, in which each tstgst portion it: itradiatesi by manning the pattern through a ra-lhstlori beam su a given direction (she 'Tea rub ng'’-di racoon) while synchronously sc&nning the substrate parallei os· and-parallel to this direction. A lithographic apparatus, which applies a desired pattern onto a substrate by irradiating a radbrtion beans, is t-lso called art exposure apparatus. Ao exposure apparatus may be a .stepper .20 or a scanner. It is also possible to transfer a pattern from a patterning device to a substrate by Iraprint-ng: the pattern onto the substrate, A HOsograpb-c apparatus, which, applies a desired pattern onto a substrate by ittspriniis-g the pattern tinto iste substrate, ratty be called an inspiltu-type lithographic apparatus. A« biïprtï-i'ïype lithographic apparatus that iraprintx an entire pattern onto a target portion or rise substrate at one time may be called an imprint-type· stepper.
(883] There it; a trend to reduce she ptodoetloi; costs per 1C, To reduce the ptodui non costs per 1C, known lithographic apparatus have beest designed to perform the exposure process, i.e., exposing a pattern on the substrate, as fast as possible and as often as possible. To have the exposure process as often as possible, a lithographic apparatus may have multiple substrate stages, at; disclosed in United State» Paraat 5,677,758. While a substrate on one substrate s-age is being exposed, a second substrate is being loaded, unloaded. or aligned on a second substrate stage. When Ute one substrate has been folly exposed, the exposure process is ntity briefly interrupted to move the one substrate stage away from the projects on system and move the other substrate stage below the· prelect let; system. This way, only duong the brief interrupt ton, she lithographic apparatus is not performing the exposure process.
(ÖÖ4] Despite the exposure process is imertupted only briefly, there is 3 desire Io expose substrates io create iC's with 3 further reduced production cost per IC. in general, overall productivity of a lithographic apparatus Is improved whe« throughput arai/c-r upiinse Is Improved. Good s triaging puality of a. pattetrt transferred onto a substrate is often required for manufacturing it's. More accurate measurement of a substrate enables better imaging quality; however, if a mote accurate measurement of a substrate is achieved by making a measurement time longer, the longer nteasuren-eat time will deteriorate-the overall products vity. In other words, there can be a trade-off between the overall productivity and the imaging quality In known lithographic apparatuses.
[ÖÖ5] Such a trade- 0ff is observed, e.g., dating a wafer niigssmerU operation conducted by tbs exposure apparatus described m the PCT-application publication No, WO 2007/097466A!. The exposure apparatus, described its this PCT publication, comprises a single wafer stage and a single wafer alignment system that comprises I'ive alignment sensors hsss-d op on a si;night line along a first direction (e.g., along the x-axis or the stepping direction). When a wafer alignment, operation is conducted as described in this PCT publication, the 16 alignment marks can he measured by the smgle (multr-sensor) wafer alignment system while moving the wafer stage only along a second direction, which is the direction perpendicular to the first direction te.g., along the y-axis or the scanning direction). When a wafer alignment opera-loo is conducted differently in this configuration, however, a longer measutemesu time can be necessary, e.g., in the following eases: I) a larger number of alignment marks on a substrate needs to be measured for enabling a better imaging quality, and/or 2) at least one of tire alignment -narks on a substrate to ixt measured <e,g,, one of the 16 alignment marks is not located within the detection area of any one of the five alignment sensors ii.e.. located outssde of the detection area of the five alignment sensors): as a result, the wafer stage needs io be trtijved not only along the second direction but also alc-ng the Mrs! threchon (i.e . not only along -he y-axis but. also along the x-axts).
{006} in general, in an exposure apparatus that comprises a single wafer stage, the time spent {prior to exposure on the wafer alignment operation is a pore overhead time and riueci ly deteriorates -he throughput pcrfonnance of the exposure apparatus. Even in an exposure apparatus that eompnses two wafer stages and a single wafer alignment system, in the case that the time spent on the wafer alignment operation is longer than the tune spent otv exposure, the throughput performance will be deteriorated. In general, an overall productivity of 00 exposure apparatus is proportional to the throughput performance for a certain uptime performance. Bence, 3 trade-off between She overall productivity and the imaging quality is observed in ar; exposure apparatus that comprises a single wafer stage ami a single wafer alignment system. Also, there can be a trade-off between tint overall productivity and the imaging quality in an exposure apparatus that comprises two wafer stages and a single wafer alignment system in the case that a large number of allgnmem marks on a substrate steeds -o be measured in order to qualify for a certain high imaging quality requirement, [607] Tireretbre., is is desirable, tor example, to provide a lithographic appurtuns in which better imaging quality cart be achieved withom detcriornthra the <sverali productivity·, la other words, it is desirable, for
S example, to provide a lithographic apparatus Its which better overall productivity can be achieved while simultaneously qualifying for a sufficient imaqutg quality required for manufacturing JCs.
[0<IS] Additionally or alternatively, it is desirable, for example, to provide a lithographic apparatus that is flexibly and efficiently compatible with different substrate sizes since she desirable or available substrate size can be different depending on the types of ICs to be manufactured. Additionally or alternatively, it ss desirable, for example, to provide a lithographic apparatus that is Γ-cxibiy and efficiently compatible with different types of substrates that ace made of different materials since the desirable or available types of substrates can be different depending on the typos of ICs to be manufactured.
[009] Additionally or altentati veiy, if Is desirable, lot example, to provide a lithographic apparatus that Is mote inexpensive tie:,, a a lower tool price) while simultaneously qualifying for a sufficient overall productivity and a sufficient imaging quality required for manufacturing a certain type of ICs. In other words, there can be a trade-off between an overall productivity of an exposure apparatus and the moi price of the exposure apparatus. Therefore, it Is desirable, for example, to provide a lithographic apparatus that improves the CoO {Cost of Ownership.! while simultaneously qualifying for a sufficient· overall productivity and a sufficient imaging quality required for inannfacturing a certain type of ICs. A
2(i contribution of a lithographic apparatus to the CoO may he estimated, e.g... ns disclosed in Free, of SPfE Yol. 5751, up 964-975 (2005) or Proe. of SHE Yol. 7271 72710Υ f2009). These publications may also be recognised as examples of the CoO calculations for different imaging quality requirements (e.g., for the 30«m node and for the 22nm node, respectively s.
[910) Additionally or alterantsvely, in practice, multiple exposure apparatuses and some other types of apparatuses are usually necessary for mamilaetunng ICs, Bence, -t is desirable to Improve a ÏCO (Total Cost of Ownership! of multiple exposure apparatuses and/or a TCÖ of all types of apparatuses and processes required for manufacturing ICs.
[Ö11] Ln other words, there can be a trilemma between an overall productivity. an imaging quality and economy (which n-ay, e. g.. be recognized in terms of a footprint, a tool price, a CoO and/or a TCO) of an exposure apparatus. In this context. In addition to various trade-offs described above, there ears be a trade-off between an overall producti vity of an exposure apparatus and the footprint (and/or the tool, price.) of the exposure apparatus. For example. an exposure apparatus, described in the PCT-applicatiou publica-ion No. WO 2007/05523 AI. comprises two Illumination systems, two mask stages, iwo projection systems and two substrate stages. The tool price, and footprint of such an exposure apparatus would be similar to two ««its of a conventional exposure apparatus. comprising a single illumination system, a single mask stage, a single projection systems and a single snb-ttrate ssSuge; furtisers'.sore. as the aninhes· o optical conipijiieai·: (-such as an slhsusbuitioss system and a projection system) is tlonhfed. various problems of these optical components that can detenorato the imaging quality would also fee doubled, in other words, a
S trade-off between the overall prtsduci.ivlty and the imaging quality would still i;e observed in such an exposure apparatus, which is equivalent or similar to concatenating multiple ousts of the conventional exposure apparatus. Therefore, such an exposure apparatus would not be economical and wouid not be a solution to she tri lemma between she overall productivity, the: imaging quality and the economy of an exposure apparatus.
[ÖJ2] According to an aspect of the invention, there Is provided an exposure apparatus comprising a substrate bolder, a sensor holder end a mover. The substrafc; bolder is for iusldissg a ••substrate, The sensor bidder is for boidiisg a sensor. Thv: mover is sumoged for moving she «uiïstrüte bolder. The mover is arranged so couple with the sensor holder 1st a liras situation so as to move the sensor holder. The mover is arranged to decouple f rom the sensor .bolder in a second susuasiosr ss> ns so move without moving she sensor
1S holder, [813| According to a further aspect of the invention, there is provided an exposure apparatus comprising a substrate holder lor holding a snbstra-e, a sensor holder for holding a sensor·, a mover arranged for movmg die subs·rate kohier, and a proieekor; system arranged to provide a beam of radiatior· onto ske substrate. During exposure, the protection system provides the beam of radiation onio she substrate when the sensor holder Is decoupled from the mover, t he mover couples with the sensor holder when the sensor measures ss property of 1 he projection systesrs os’ She radsaliors beans [014] According to another aspect of rhr invention, shore, is provided ass exposure appara-us comprising ss br^t substrate bolder for holding a fust substrate, ss second substrate hoisfer for bidding ss second substrate, a projection syslera for exposing ske fust snhstrale with ass exposure beam, a measurement devies ananged to provide measurement information of she second substrate, and a limber measurement tie vice arranged to provide nsesssssrensessi information of dse first substrate. The further measurement device is closer to she projection system than ske measurement device.
I’Ölis) According to yet another aspect of dse invention, there ss provided ssn exposure apparatus comprising ss flras. substrate bolder configured to kohl ;s substrate. a second substrate holder cisniigsued to hold rise substrate. a sessroi iioldet configured so Isold a sensor, a projoeboss system configured to expose the substrate with an exposure beam, a measurement device configured to provide measurement iisfon-smiots of dse substrate.. a fostlser raeass.it eu-cuf device configured to provide further measurement informal;on of dse substrate. The sensor is configured to measure a property of the exposure beam and/or the projection system.
[M6J ÉïïihiiöOTienK of the invention will now fee described, by way of example- only, with reference io she accompanying schematic drawings in which corresponding reference symbols indicate corresponding paris,
S and in which:
Figure 1 depicts an embodiment according the invention;
Figure 2 depict» a further embodiment according the invention in a first view (e.g., in a top view); Figure 1 ilcplcts the fresher embodiment. according the invention in a second view (e,g„ in a side viewy
- Figure 4 depicts an exposure apparatus according to the invention in a first situation;
Figure S depict:· the exposure appararos according it the invention In a second situation;
Figure 6 depicts the exposure apparatus according to die invention m a third situation;
Figure 7 depicts yet a further embeds meat according to the invention;
Figure 8 depicts another embodiment teccording to she Invention.
1S Figure 9 depicts yet another embodiment according to the invention in a side view.
Figures i 0A-101 depict s way of operating the embodiment of Figure 9' in top views.
OEIMmLPBSCRiPTfON [017] Figure 1 schematically depicts a lithographic apparatus according to one embodiment of she invention. The lithographic apparatus comprises an üiusnlnation system IL, a support structure MT, a substrate table WT and a projection system PS. The illumination system IL is configured to condition a radiation beam B, The support structure MT is constructed to support a patterning device MA and is connected to a first positioning device PM configured to accurately position she patterning device MA in accordance wish certain parameters The substrate table WT is constructed to Isold a substrate W, e.g., a
2Ö resist-coated wafer, and is connected to a second positioner PW configured to accurately position the subsitate W in areordaoce with certain parameters. The projection system PS is configured to proleet a pattern imparted to the radiation beam B by patterning device MA onto a target ponion C fe.g. composing one or more dies) of the substrate W, [018] The iiluiuinntioi: system if. may include various types of optical components, such as refractive.
reflective, magnetic, electromagnetic. electrostatic or other types of optical components, or any cos-obinuiioo thereof, for directing, shaping, or controlling radiation, [017] 'The IIlurnimiticin system IL receives the radiaiior· beam fs from a radiation source 50. The fstiiahon source SO aad the lithographic apparatus may be separate entities, for example when the radiation source SO is nn excimer laser, in such cases, the radiation source SO is nut considered io form pan of site hshograpbic appaiatus and the rsdsstion beans is is passed fro-rs the radiation source SC ίο the illumination system fL with the aid of a beam delivery system BD cosripritting, for exitmple, snistsble directing mirrors nttd/or a beam expander. In other cases the radiation source 80 may be an integral part of the tithe graphic: apparatus, for example when the radiation source SO it; a mercury lamp. The radiation source SO and the iliutnination system IL, together with the beam delivery system BO if required, may be referred to as a radiation system.
|’Ö2Öj The iiLsmlnahoss system ft., may comprise au adjuster Al> for adjusting the. angular intensity distribution of the radiation beam. Generally, tsf feast the outer ami,Or inner radial extent (commonly refereed to as σ-outer and o-inner. respectively; of the intensity d-stributiott in a pupil plane of the illuminntion system IL. cun be adjusted. In addition, the illumination system fL may comprise various other components. suets as us; integrator IN and a condenser CO. The i lluminalion system fL may be used to condition she radiation bstasrt B. to have a desired uniformity and intensity distribution its its cross-section. (021) The tertsi “radsalien beasts'’ used herein encompasses ail types of electromagnetic radiation, including ultraviolet (UV) radiation te.g. ins ving a wavelength of or about 365. 355. 248, 19.3, 157 or 126 am) nssd extreme ultra-violet {EUV; radiation (e.g. hisvitsg a wavelength io the range of 5-20 tun, or having a wavelenglh of os' about 13,5 tsm or 6.7 arts), as weit ;ss particle beams, stscls as son beams or electron feea-u;·. The radiation beam may comprise visible light, stseh at; the spectral hoes provided by a Mercury lamp: a g-iine (having a wavelength of or about 436 urn) and/or an h-fhse (having ;s wavelength of or shoot 405 nen), 'Lbo visible light sassy be provided by a shsgle TEL's {light-emitting diode) or a combination of nsssiilnle LEDs. A, simde LED or & combis-asmo of mulstpie LED:; may provide UV radiation, visible light sutd/or infrared radiation.
[022j Tfse support structure MT support», i.e. boars tint weight of, the patterning device MA. The support ssrucbsre MT holds the patterning device M.A in a manner that depends ots the orientation of She. patterning device MA. the design of the lithographic apparatus, ssud other eondstsoas. such as for example whethet or siot the patterning device M A is held In ;$ vacuum environment. The support strtsetore MI can tsse ssiitohanscai, vacuum, electrostatic or other clamping techniques so hold she patterning device. MA. The support structure MT may be a frame or a table, for example, whicis rnay be fixed or movable as required. Tits , support structure MT may css sure that ihe patterning device M’A ;s at a desired position, for example with respect Its the projection system PS. Asi<lssifsisaljy the support ••l.ructute MT may comprise ts patterning device holder, a mechanism and/or a stage body that, enable so actively bend the patterning device MA, By aciivciy bending the pattentmg device MA, a curvature of the patterning device MA. may be controlled. Such n support structure MT Is disclosed in she US nalunt applications publication No. 5JS
20! 3/Ö25Ö2 I Al and US 2016/0011525AI, hereby incorporated by reference.
[023] The term ''patterning device” used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in us ctoss-sectiott such as to create a patter» in a ttirgel portion C of the substrate W. it should ixt rt-tteil that the pntserti impartedto the radiation twam fs may not exactly correspond to the desired pattern in the target portion € of the substrate W. for example if the pastern includes phase-shifting features or so called assist features. Generally, tee pattern imparted to the radtalion beam B will correspond so a particular toecitonai layer in ii device being created ia the target portion Ü, such as an integrated cireuit, [024j The. patterning device MA may be transmissive or reflective. Examples of patterning devices include masks, programmable minor arrays, tmd programmable. LCD panel·; The patterning device MA may be referred to as a mask ot a reticle. Optical properties of an aerial image (i.e., an aerial image of a pattern projected onto the substrate W > may be corn'rid led by actively bending a transmissive mask, a transmissive reticle, or a reflective mask. Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types. An example of a programmable mirror array employs a matrsx arrangement of small mirrors, each of which can be indivtduaiiy tilted so as to reflect an incoming radiation bcant in different directions. The lilted mirrors impart a. partem in the sadists or; beam 8 which Is reflected by tin , mirror matrix.
jö25] The term “projection system” used herein should be broadly interpreted as encompassing any type of projection system, including refracti ve, reflective, catadsc-piric, magnetic, electromagnetic and electrostatic optical systems, or atty combination thereof, as appropriate for the. exposure radiation being used. or for other factors such as the use of an immersion liquid or the use of a vacuum.
(02bj Ah here depicted, fits ikhogfaphic apparatus is of a transmissive type (e.g. employing a transmissive mask). Alternatively. the lithographic apparatus tuny be of a reflective type te.g. esuploying a programmable mirror array of a type as refereed to above, or employing a reflective mask).
[027] The lithographic apparatus may be of a type having two (dual stage.) or more substrate tables (and/or two or more mask. tables > in such ”moit spie stage'’ machines the additional tables may he used in parallel, or preparatory steps may be curried out on one or more tables while one or more other tables ore being used tor exposure. An addiltonai table may be arranged to bold at leas; one sensor, instead of holding a substrate W. The at least otte sensor natty be a sensor to measure;; property of the projection system tos, ora sensor to measure a property of the exposure radiation, a sensor to detect a position of a marker on the patterning device MA relative to the sensor or may be any other type ot sensor. The additional, labia may comprise a cleaning device, for example· tor cleaning part of the projection system PS or tiny other part cf die lithographic apparatus.
The I ithographsc apparatus may also be of a type wherein at least a portion of the substrate W may be covered by a liquid having a rshtt.ivety high refractive Index, e.g. water, so as to fill a space between the projection system PS and the substrate W. An immersion liquid may also ba applied to other spaces in the lithographic apparatus, for example. between the patterning device MA and the projection system PS. Immersion techniques are well known in the art for increasing the numerical apert rue of projection syr ems. The term “immersion” as used herein does not mean that ;s structure, such as a substrate W, must be submerged it liquid, but rather rariy means that liquid is located between the projection system PS and the substrate W during exposure.
[029| The radiation beam B is incident or, the patterning device MA. which is held on the support structure MT, and is patterned by the patterning device MA. Having traversed the support structure MT, the. radiation bean”! B posses through the projection sysient PS. which focuses the beam onto a Serges portion C of the substrate W. The radiation beam B. which Is used for ex posing the substrate W, may also be referred to as an exposure beam. Witt- tire aid of the second positioner PW and position sensor IP (e.g. an interferometric device, Γ-near encoder or capacitive sensor), the substrate table WT can he tnovtxl accurately, e.g. so as to position different target portions C In the path of the radiation beam B. Sirolrariy, the first positioner PM and atsothet position sensor (which is not explicitly depicted in Figure 1) can be used to accurately position the patterning device MA with respect io the path of the radiation beam B. e.g. after mechanical retrieval
SS from a mask library, or during a scan. In general. movement of the support structure MT nray be realised with the aid of a locg-ssrake module and s short-stroke module. which form pan of the first positioner PM. The long-sit eke mtjdulc ptovides movement of the suppers structure Μ T over a forge range wish limited accuracy (coarse posttiom ng), whereas tlte short-stroke module provides movesuent of the support structure MT relative to she long-stroke module over a small range with high accuracy ffine positioning). Similarly.
mo vemeat of the substrate table WT may be rattiieed using a long-stroke module and a short-stroke module, which form pan of the second pusht oner PW. in i he trast; of a stepper (as opposed to a scanner) the support structure MT may be connected to a short-stroke actuator only, or may be fixed.
[i 36] Patterning device MA. and substrate W' may be aligned using rnassk alignment mark» M1, M2 and substrate alignment marks Pl, B2. Although the substrate tihgnraesrt mads Pi, P2 as iiltsrtrsted occupy
2S dedicated targe portions. they may be located so spaces between target portions C. Substrate alignment marks Pi. B2 are known as scnbe-lane alignment marks. when they are located in spaces between the target portions C. Simslariy, in situations in which more than one die is provided on the patterning device MA, the mask alignment marks Ml, M2 may be located between the dies.
(Ö31 ] The depicted apparatus could be used in at least one of f.i e Milo wing modes:
3Ö (032’j in a first mode, tbs step mode, the support structure MT and the substrate table WT are kept essentially ‘-t&iicnuty, while an entire pattern isnparted to the radiation beam B is projected onto a target pomon C at one time (i .e. a single .stelle exposure). The sulïstrate tabic WT Is then shifted in the X and/or Y direction so that a ditftteui. target portiots C cun be exposed. in step mode, the maximum size of the exposure field llmitrs the size of the target portion C imaged 1st a single static exposure.
(¢133] 3:5 a second roods, the scan titode. the support ti.rucmre MT and ;he substrate table WT sire scanned synchronously svhilo ;s postern imparted to the radiation beam B is projected onio u target portion € fix, e single dynamic exposure). 'fbe velocity and direction of the substrate table WT reiati ve to the support, structure MT may be determined by the (de-jmagnifiCsMion and image reversal characteristics of the projection system PS. 3s; :xxe; mode, the maximum size of tits exposure field limits the width (io the rmo-scaruimg direction) of the target portion € in a single dynamic exposure, whereas ;3:e le-igib of the: scanning motion determines the height (is; the scanning direction) of she target portion C.
[034) is; a third mode, the support structure MT is kept essentially stationary holding a programmable patterning device MA, and the substrate Bible WT Is moved or scanned while a pattern imparted to the :0 radiation bean» B is projected o-rto a target portion C. in this «axle, generaily a puked radiation source is employed and the programmable patterning device MA is updated as required after each movement of the substrate table WT or in between successive radiation poises dunng a scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such os a programmable mirror array of a type as refected to above. This mode of operation can also be readily
S applied to c-beam felectro!', beam) lithography.
(Ö3S) The idhtigi'aphic apparatus further I ucludes a controi ooit which conttols the actuators anti sensors described. The control unit also includes signal processing and data processing capacity io Implement desired calculations relevant to the operation of the lithographic apparatus. ft;, practice, the control unit will be realized as it system of many sob-mtUs. Each sub-unit may handle the real-time data acquisition, fid processing anti/or control of component within -ho lithographic apparatus. For example, one sub-unit may ix; dedicated to servo control of the second positioner PW. Separate sub-units may handle the short-strobe module and the long-stroke module, or different axes. /Another sub-unit n«ty be dedicated to site readout of the position sensor IF. Overall control of the lithographic apparatus may he controlled by a central processing unit, coxuouitlcafiag with the sub-units, with operators arid with ruber apparatuses involved sn
2s the lithographic manufacturing precess.
(03fsj Combinations and/or variations on the above described modes of use or entirely different soodes of use may also be employed.
[1337] The substrate W may he any one of the following substrates: a silicon (Si) wafer, a Silicon-Carbide (SiC) wafer, a Sapphire wafer, a Gallium Nitride (GaN) wafer, a GaN-on-Si wafer which is a silicon wafer with GaN layers, a Gallium Phosphide (GaPt wafer, a Gallium Antimonide. tOaSh) wafer, a Germanium (GE) wafer, a Lithium Tanialate (LtTa) water,Lithium Ntcb&te (LIN ,j wafer, an Indium Arsenide tin As) wafer, a indium Phosphide 1 InP) wafer or a glass substrate. The substrate W may be made of any other materials such as Gaihum Oxide and Gallium Arsenide. A substrate made of one of these materials may be more suitable than the others for the production of a specific type of ICs. The substrate W may have any suitable size for the production of 1C' s, for example, a diameter of 12.5mm or 5OfnsT* or I 00mm or 150«wn or 200mm or JOOin-r- or 450mm. The. substrate W may have atty suitable shape; e.g.. the substrate W may be circular, square, or rectangular The substrate W may have any suitable size for the production of a mask, a template, a reticle, a test reticle ora dummy reticle, e.g., 6 inches square ίό inches x 6 inches). The
S substrate W may have any suitable size for the production of Oih-panei-displays (FPD), for example. 04. G6(e.g.., a size of approximately 1.5m x 1.8m), 08 ie.g.. a size of approximately 2.2m x 2.5m) or GIO, etc. Multiple substrates may be contained in a FOUR /Front Opensng Unified Pod·; e.g.. 25 silicon wafers may he cootamed in a FOOT. These waters may he referred to as a lot of wafers. .A substrate contained in a first PGUP may be referred to as a substrate in a first lot.
(03Rj The li thographic apparatus of r-gure I is an example of an exposure apparatus. An exposure apparatus is an apparatus that presides are exposure device to expose a substrate W with an exposure beam, i.e,. radiation beam B. By exposing the substrate W, a pattern is created on the substrate W. in case the exposure apparatus is an optical ittbograpbie apparatus, tits exposure device is usually referred to as a projection system PS, In art embodiment. the. projection system PS comprises a lens battel and multiple optical elements (such as lettses, prism:·; anti/or mirrors;. In an emlx-dimem, she projection system PS further comprises a lens holder for holding each optical element and actuators (such as ptezo--elements) for controlling dte positton {e.g.. position in the vertical direction, i.e., along the z-axts) and orientation fe,g„ tilting in the Rx- and Ry-ditecltons), Examples of a prisleebort system PS, which etna fee used in the context of the invention, are disclosed in the FCT-appIlcation publications No. WO 2ÖÖ5/ÖG1543AI, WÖ
2005/064382A1 and WO 2007/091463A I, hereby incorporated fey reference.
[Ö39J Another example of an exposure apparatus is an e-be&m apparatus. Unlike an optical Ibhagiisphk: apparatus, the e-beam apparatus has an exposure device that provides an e*beam (electron beam) to the substrate W to create patterns ort the substrate W. Suets an exposure device may be referred to ns a modulation device. Au e-beam tuny comprise a beans of electrons. The e-beam sppijratut· may he arranged to provide multiple e-beams simultaneously, fey having multiple exposure devices or by having;; single exposure device arranged to provide multiple e-beams simultaneously. An example of a modulatitsti device, which can be used in the context of this embodiment. Is disclosed in Japanese patent application publication No. .IF 2011-258842A, hereby mcorporated by reference.
{040} Figure 2 depicts ;s first embodiment of the invention in a First '.dew, e.g., in a top view. Figure 3
SO depicts the first embtxhmenl of the Invention in a second vtesv, e.g., in a side view. Figures 2 and 3 show part of art exposotc apparatus 290 comprising a substrate holder 292, « sensor holder 206 end a mover 204, The substrate holder 202 Is arranged to hold the substrate W. The sensot holder 206 is arranged to hold a sensor. The mover 204 Is arranged to move the substrate holder 202. The substrate holder 202 may alternatively be refenedtoas ‘substrate chuck’ or wafer chuck'.
(Ö4I] The -mover 294 is arranged io move the substrate holder '292 -idativs ts> ihe projection Syrians PS. so the exposure beam projected froin the projection system PS can exposure all target pottions C. The mover 204 may move in Use κ-dsreeuon. the y-dirocrion and z-direetion. The mover 204 and/or the substrate holder 21)2 may be provided with an actuator system for moving the substrate holder 202 relative to the mover 294 while the mover 204 supports the .substtuïe holder 202. The mover 204 may be considered a long-stroke module for inaccurate movement over s large range. The substrate holder 202 may fee considered a short-stroke module for accurate movement over a small range. The substrate holder 202 may support the substrate table WT or may be integrated with she substrate table WT The mover 204 may be provided with a planar motor to move relative to the exposure device, e.g.. projection system PS. The mover '204 may be arranged to move relative io the projection system PS in foe scanning direction, e.g,. the y-ciirecrion as Iadkated in Figure 2. The mover 204 may be arranged to move relative to the projection system PS in a di reehors perpendicular to -he scanning direction, e.g., the x-dtrecrion an indicated Its Figure .2, The direction peipendlctihtr to the scanning direction may be referred to ns ihe stepping direction. The mover 204 may move in -he scanning direction while the substrate W is being exposed by the projection syslern PS, The mover 204 may strove in the stepping direction while ihe substrate W is not being exposed by the projection system PS, The mover'204 may be arranged to move with a higher acceleratitm and/or velocity In one of ihe scantling direction sod die .stepping direction than m she other of hie scanning direction and the stepping directii!!!. The plasur motor may have magtieis on the moves 204 and colls on a base supporting the mover 204. Such a planar motor may be referred to as 'moving magnet type planar motor'. Alternatively, the planar motor has the cods on the mover 204 and Site magnets os> the base supporting the mover 204. Such a piattas’ motor nitty be referred to tts 'moving coil type pltnitsr motor’. Ahernat tvely. she enover 204 may comprise one linear motor or multiple linear motors. Additionally or alternatively, the mover 204 rtiny be arranged in an H-drive-arrangement; in other words, she mover 204 may comprise at least one X-linear motor (i.e., a lineat motor costfigs-red to primarily move in the x-dircciion) and as least one Y-liaeor motor foe,, a linear motor configured to primarily move in the y-direetion). for example, she mover 204 arranged ist ssn H· drive-arrangement may comprise a pelt of V-thtetii motors and art X--linear motor, whose stator is attached to the moving parts of the pair of Ydsnear motors.
[042] The sensor bolder 296 hold·; at least one sensor. For example, the sensor holder 206 has one sensor, or the sKRssir holder 296 Isas multi pie sensor;;. Tbs- sensor sntiy be ss sensot so measure a property of the exposure beam, sneb as dose or aberrations or uniformity. The sensor holder 296 may comprise the additional table to hold the sensor or may be integrated wish the addiisonai table. The sensor holder 206 may comprise a cleaning device, for example for cleaning part of the projection system PS or any other part of the lithographic apparatus. The sensor may comprise an aerial image measuring device configured tu measure an aerial image of a pattern projected by the projection system PS.
π [94 j In an embodiment the sensor holder 206 is provided with at least one of a sensor and a cleaning, device. The sensor may be called a measurement member, in an embodiment the sensor holder 206 is pfc-vidcd whit an illuminance srrogobirity sensor. The illuminance irregularity sensor h; configured fo detect irregularity of illuminance of the radiation beam 8 that, is received a: a pin-hole shaped light-receiving section of the Illuminance irregularity sensor, in an emhodimem the sensor holder 2B6 is provided with a sensor such as an aerial image measuring device. The aerial image measuring device is configured to measure an aerial image of a patters: projected by the projecties: system P J. In art embodiment the sensor holder 206 is provided with a sensor such as a wavefront aberration stteasssristg device. A wavefront aberta-ism measuring device is described In Japanese patent applleariou Publication No. JP
JO 2003-160613 A, hereby incorporated by reference. The wavefront alienabort measuring device in configured to measure aberration of a wavefront for example using a Shack-Hartmann method. Such a wavefront aberration measuring device may also be referred to as an abenanon sensor, 1st ar, embodiment the sensor bolder 206 is provided with ;t sensor such as an illuminance monitor. The illuminance monitor is configured to receive the radiation beam B on an Imago plane of the projection syriem PS and to measure »t least one protxuxy of the radiation bean· B provided by the projection, system PS. In an emboditnent the wavefront abatrariori measuring device anb.toi the ilbunsnnnee monitor are located on a top surface of the sensor holder 206, [1)44] In an embodiment, one of the sensors held by the sensor holder 206 is arranged so uxmsure sin aberonisvn of the projection system PS, a pupil of the projection cysten: PS, and/or a polarisation of the
2Ö dhuninaticin system ÏL Measurement data obtained by one of the sensors held by the sensor holder 206 n»y he used for cottditionirtg or controlling a property of the projection system PS. the patterning device MA. the llhrourtabors system 11.., utul/or the radiation source SO In order to improve the imaging qtsality el an exposure apparatus. When the sensor is arranged to measure site aberration of ihe protection system PS. a sbouriatfori model can be used to predict a distortion of no image on the substrate W, i.e., an aerial image of
3S a pattern projected onto the stsbstrate W, Additionally or alternatively, she simulation model can he used to predict a change In the aberration of the projection system PS and/or can be used to predict a distribution of art llkimsnatiot'i pupil of the illnmmtoion system Π... Additionally or alternatively, the simuiatiort model can be used to precise! a pattern created on the substrate W, Additionally or alternatively, a wavefront aberration measuring device and/or an aerial image measuring device may be used to calibrate, update and/or improve the sinuiiation model. The use of a aitnolation model is not limited to when the sensor is arranged to measure tbs aberraties: of rise projection system PS, In an alternative embodiment, a uniformity sensor is used «'instead of the abemttett sensor) to calibrate, update or Improve -be simulation model. The unriormity sensor may tie supported by she sensor holder 206, Examples of a simulation model tor att algorithm used In a simulation model that eat: be used in the context of the invention arc disclosed in Japanese paten;
application publications No. JP 2013-165134a and No. JP 201-1--165291A and the PCT-application publications No. WO 2011/1Ü2100A1, No. WO 2O14/O42O44AÏ and No. WO 2015/1827S8A 5, hereby incorporated by reference. The example: of the sensors mentioned are schematically illustrated in the figures as a square, a circle and a triangle on the sensor holder 206. in an embodiment the shape of she sensors may be difierent than illustrated.
[04,5] In an esnbtxJirnent, She. aerhsi image measuring device, configured to measure an aerial image of a paüem projected by the projection system J’S. comprises a detector, a fitludai plate. ao-i/or an optical element. The fiducial plate comprises a fiducial mark and/or a pan of aerial image measurement silt palietos. The aeh.tii image measuring device may comprise multiple fiducial plates. in an embodiment, all t0 parts of the aerial image measuring device are provided on thts sensor holder 206. Alternatively, traiy part of the aerial image measuring device, e.g. only rite detector, may be provided on the sensor holder 206. Alternatively or additionally, part of die aerial image measuring device, e.g. a fiducial plate, may he provided on the substrate holds 202. Alternatively, the aerial image measuring device may be provided on a dummy wafer as disclosed in the .Japanese patent application publication No. IP 2097-189180A, hereby
IS incorporated by reference. Such a dummy wafer may be loaded on the substrate bolder 202 in place of the substrate W, [046] The exposure apparatus 20Ö may comprise an exchange mechanism 208 for providing the settsor holder 206 to the mover 204. for removing the sensor holder 206 from the mover 204, for stipporshtg the settsor holder 206 and/cr for moving the sensor bolder 206.
[Ö47] Figure 4 depicts the exposure apparatus 209 in a first situation. The mover 204 is arranged to couple with the sensor holder 206 in the first situauon sc as to move the sensor holder 266. When the mover 204 tmd the sensor holder 206 are coupled so each other, a movement of the mover 204 may cause a movement of the sensor bolder 206. The mover 204 snay move the sensor holde-’ 206 relatively to the projection system PS, so different parts of Ihe sensor bolder 296 enay be beneath the projection system PS. For example, the mover 2.04 may move the sensor holder 206 relatively to the projection syssoso PS so multiple sensors on the sensor holder 296 cars be exposed with the exposure beam front the projection system PS (in other words, a property of the exposure beam can be measured by each of these sensors on the sensor bolder 2.06), (¢48] As depicted 1st Figure 4. both the substrate holder 202 and the sensor holder· 206 are supported by the mover 204. The substrate holder 202 and the sensor holder 206 may be affnnged to move j« urtNon relatively to the mover 294 in the first siluatson. In ease immersion techniques are. applied in the exposure app&ratos 20Ö. during she move in unison i i.e., the movement, of the substrate holder 202 and the sensor holder 2061st unison), immersion liquid may be transferred from one. of the substrate holder 292 and the sensor holder 206 to the other of the substrate holder 202. und the settsor holder 296. Dunne, the move in unison, the substrate holder .202 and the .sensor holder 206 srttsy he its contact with each other or separated from each other by a gap. The gap may be small enough to limit or preveel leakage of immersion Isgoid between the subs) rate bother 7.02 and the sensor holder 206 during she soovc its tmixon, in cose immersion techniques are practiced, the lithographic apparatus may' comprise a liquid handling system configured fo supply and confine the immersion liquid to a space defined between the projection system PS and at least
S one of fhe substrate holder 202, the substrate W. and ike ‘tensor holder 206.
[0491 Figure 5 depicts the exposure apparatus 200 in a second situation. The mover 204 is arranged to decouple front the sensor holder 206 in the second situation so as to'move without the sensor holder 206. in the second situation. the mover 204 can move without, the sensor holder 206 in she second situation. the mover 264 supports the substrate holder 202 and does not support the sensor holder 206. The sensor holder
206 is supported and/or moved by the exchange mechanism 2.08. When the sensor holder 206 is located near or at the projection system PS by the exchange mechanism 268, the sensor on the sensor holder 206 may perform tf measurement. The exchange mechanism 208 may move the sensor holder 200 relatively to fhe projection system PS, so different pads of the sensor holder 206 may be located beneath the projection system PS. When the mover 204 moves in the second situation, fhe mover 204 titles not move the tnass tsf the sensor holder 206. in she second situation, fhe mover 204 may move the substrate holder 2(s2 relative to the projection system PS so as to exposure the target portions C. The second sitotstion may be during exposure. As the mover 20* doe.» not need to move the mass of the sensor holder 206 in the second situation, the mover 204 may move faster, Alternatively, the mover 204 may make, use of smaller actuators to achieve a desired acceleration. In case the mover 204 moves faster, more target portions C may be exposed per unit of time, reducing the costs per target portion C. lit case the mover 264 makes use of snelle actuators. the lithographic apparatus may bo less expensive ii.e„ uf a lower tool price). The lithographic apparatus may be less expensive, because less expensive actuators may be needed, a less expensive cooling system, less expensive amplifiers, etc.
[OSO] Figure 6 depicts the exposure apparatus 200 in a third situation. The mover 204 supports the sensor holder 266 . The exchange mechanism 208 supports the substrate holder 202. The exchtsnge mechanism 208 may move site substrate holder 202. to a substrate unload location. When the substrate bolder 262 is at the substrate unload location, a subsi rats handler may remove the substrate W from the substrate holder 262. bs addition, a new substrate W may be placed on {or loaded onto) tits substrate holder 202 at the substrate unload localsoti. A naw suixtrate W may be loaded onto the substrate holder 262 at another location, e.g., at a substrate load location. In the third sstnadon, the sensor holder 266 may he located near or at fhe. exposure device, e.g., the projection system PS. When She sensot boldet '206 is located near or at the exposure device., fhe sensor on the sensor holder 206 may perform a measurement. The mover 204 may move the serssor holder 266 reiafi vely to the projection system PS, so different parts of the sensor holder 206 may be located beneath the ptojection system PS.
[051] 'The sensor holder 206 may ba provided with ars actuator ia move relatively io the mover 204, For example, the actuator may be arranged to move the sensor holder 206 relatively to the mover 204 in the x-dsrecsios ot the y-direction. The aciuatcr system may comprise an asrsty of coils and an array of magnets. One of the stray of coils and the aaay of magnets may be provided on the sensor holder 206. The other of the array of coils and the array of magnets may be provided on the mover 204. The array of cods and the array of magnets may interact with each other to provide a driving force so move the sensor holder 206 relatively to the mover 204. Ahertsatively. the aetoaior may be provided, with a stash , magnet or with a stasis cod, Additionally. a sensor system may be provided to determine a position of the sensor holder 206 relative to the mover 264. A controller may be provided that controls the actuator system based on a signal to from the sensor system, [052] Figure 7 depicts a further embodiment of the invention. The left part of Figure 7 depicts a side view of the mover 204 supporting the substrate holder 202. The substrate holder 202 supports the substrate W of a certais diameter The diameter may, e.g.. be one of 12.5 mm or 50 mm or 100 mm or 150 mm or 200 rem or 500 msn or 450 am, ft may be beneficial if the exposure apparatus 200 is arranged to hold a further δ substrate W2 having a different diameter tbtsn substrate W, as shown in the right pan of Figure 7. The sight pars of Figure 7 shows sfe movet 204 ssjpps>stii!g: a furshor siibs'rate hoi ties' 762. The further substsasc bolder 702 is arranged to hold the further substrate W2. The diameter of the further substrate W is larger than the diameter of substrate W. The diameter of the further substrate 'W2 may, e.g., be one of 12.5 mm or 50 mm or 100 mm or 150 tun or 200 ours or 300 mm or 450 rara. The farther substrate holder 702 is larger than the vtibstrafe holder 202 Altcrnatl veiy, the further sttbslrate holder 702 may be smaller than t’ne substrate holder 202. To accommodate the further substrate holder· 702, the mover '264 may have two parts; a left part 706 and a right pan 764. Together, the left part 706and the right part '704 are arranged to support the substrate holder 202 and the further substrate holder 702. When supporting she substrate holder 202, the let's part 706 and the right part 764 are as a distance 710 from each other. When supporting she further substrate holder 702, the left part 7Ö6 and the tight part 764 are at a distance 726 from each other, in case the further substrate holder 762 is larger than the substrate holder 20 ., the distance 726 is larger than the distance 710, so there is more space between the left pan 760 and the right part 764 to support the further substrate holder 702 6.¢., in this case, the left part 706 and the right part 704 are more apart from each other). Tbs left part 706 aticl the right pars 704- may be manual!y adjustable sc ses ihe distances 710 ami 726. or the mover 204 may be provided with an actuator to set (or adjust) the distances 716 and 720, The actuator may comprise a lead screw or a oicso acsusster ot any other suitable actuator to move the left part 766 and the sight part 70^ eefative to each other. The mover 234 may comprise a sensor to provide a signal representative of the distances 716 arid 720. The signal may be used as a control signal for the actuator to set (or adjust) the distances '7IÖ and 720.
[ÖSJ| The embodiment of Figure 7 may ptovid·; the benefit of haring a single lithographic apparatus that ts able to process -mbstrates svi-b dofc-retst size:-. An tC-manufacturer does not have buy n dedieatid lithographic apparatus for each sue of substrate; instead. a single lithographic apparatus processes substrates whit d-fi'erent sizes, wlsieh results irt an efficient use of the lithographic apparatus, The lithographic apparatus rtsay be provide with a substrate holder handler. 7’he Ibhogiisphic apparatus tnay be provide with moltipte substrate holder handlers, fir; substrate holder handler is arranged to noopte with the substrate holder 202 and to remove the substrate, holder 202 frons the lithographic apparatus. The substrate bidder handier is artattged to add the substrate bidder 202 to the lithopgrahsc apparatus, for example, by putting the substrate holder '202 onio the mover 204. Similarly, the substrate holder handier may be arranged to add to and remove from the lithographic apparatus the other substrate holder 212 and/or the funber substrate holder 702 For example, the exchange mechanism 208 may form the substrate holder handler. Tbs exchange mechanism 208 may comprise mult-pie substrate bolder handlers, and each of the substrate holder handier may be independently controlled. When the IC-munufacturer wants to expose a different size or type of substrate W. She substrate bidder handler can remove the current substrate bidder (i.e,. the substrate bolder currently in use} from the lithographic apparatus and replace it with another type of substrate bolder that is suitable for the different size or type of substrate W. In this embodiment, the other substrate holder 212. may have the same size as the substrate holder 202. whereas the further substrate holder 702 may have a different size than the substrate bolder 202. nt this embodiment, ilrere may be another substrate holder whose size is the same ns the further substrate, holder 702. in this embodiment, the substrate holder 202 and the other substrate holder 212 mtty he replaced with the further substrate holder 702 end -mother stsbstraic holder whose size is the same as the further substrate bolder 702 when the iC-manufactunir wants to expose a different ssze- of substrate W, 'The substrate holder handler may be very similar to a wafer handier, and may, for example, comprise a robotic arm and/or a gripper to engage with the substrate holder.
[(154] The left part 796 and the right part 04 may each be provided with a cot I array 740, The cos’ array 749 may extend ns the y-dtrecüca. The substrate holder 202 and she further substrate holder 702 may be arranged with s magnet array 730. The magnet array 730 stray extend in the y-direetion. Alsemativeiy, the left part 706 and she sight part 794 each are provided wish the magnet array 730, and she substrate holder 202 and she further substrate holder 702 are provided wish the coil array 740. The magnet array 720 and the coll array 740 together form an actuator system to move she substrate holder 202 and the further substrate holder 702 relatively to the mover 2Ö4 irt the y-direetion. The actuator system may be arranged to move the substrate holder 202 and the further substrate holder 702 relatively to the mover 294 over a distance of one os- several target portions C. This distance may be less thast 109 mm or less than 59 mm or less than 29 mm or less than 10 trust or less than 3 mm or less shun 2 nun. The actuator systetn may «kes-jsaOvely or 1st addition be arranged to move the substrate bolder 202 relative to the mover 204 ir» the x-direcuon. A range of movement m the x-direcuon may be substantial smaller than a range of movement In the y-directson. for example, she actuator system may move the substsase bolder 2Ö2 relative to the mover 204 in she x-tfireclton over a range of less than 5 mm, e.g-. less than 2 mm. e.g., less than 1 mm. The left p;rri 70ft and the right part
S 704 each may form a U-shape. The U-shape may form a space into which a position measurement system may extend. Forexample. art encoder system extends iisrongh she iJ-sbape. The mover 204 may be anaoged such hut the substrate holier 2Ö2 may be coupled and decoupled to the mover 204- by moving along the direction of the magnet array 730, i.e.. in the y-dtrection of Figure 7. One of the magnet array 730 and the coil array 740 may form part of the actuator to move the sensor holder 206 relatively to tire movet 204.
• ft (055] The move·· 204 rt-ay support a guide system. The guide systen; may be arraaged to guide a jnoveosent of the left part 706 and the right part 704 in the x-direcdon relatively to the each other. For example, the guide system comprises a gutde rad to allow a movement of ifee left pars zOfs along the x- tiireetton relatively to the right part 704,.
[Ö56] The guide rail that guides the left part 706 may be provided with two end slops. One end step may be at ora-; side of she guide rad. When the left pars 706 is poritioned at she one end stop, the left part 706 may fee set to suppers the substrase bidder 202, The other end stop -nay be at the other sids of she guide sash Wises; the left part 706 is positioned at the other end stop, the left part 706 saay be set = adjusted) to support the further substrate holder 702. .Ssstsilariy, she guide rail shat gaides she right part 7754 may he provided with two end rsops;. When the right part 704 is positioned as the otto end stop, the right pssrS. 7Q4 may be set to
2ö support the substrate holder 202.. The other end stop may be at tlte other side of rite guide rad. When the ngtst part 7X54 is positioned as the other etsd stop, the right putt 7X54 may he set Sts support the further subssrate holder 702, [057] In an embodiment, the substrate holder 202 is arranged to hold the substrate W and the further substrate W2. For example, rite substrate holder 202 may he provided with a clamping device tn clamp the
2:5 substrate W and she further substrate W2. Tits clarupksg device may prnvssle a d;ss's;p;tsg tore;;, e,g„ a vacuum force or an electrostatic force, on a first area when clamping the substrate W. The ciampmg devsee may provide the clamping force on a second area when damping the fort Iter substrate W2. The second atea may be larger man the first area. The second area may have a larger diameter than the first area.
[058] Figure 8 depicts an embodiment according to the. invention, in the left part of Figure 8, the mover 2.(54 supports the substrate holder 202 and the sensor holder 2.156. The sensor bolder 2X16 has a width 80(5 and a length 802. The tesq-tb 307. substantially equals a size of the substrate holder 202, For example, the size of the substrate holder 202 Is about the diameter of the substrate W. The length 802 is about the diameter of she substrate W. The length §502 may substatkislly equal the site of the substrate holder 202 and snsty be lotsg enough so accommodate a marker array 810. The marker array 810 may provide tor cosnprise) alignment markers along a distance about equal to the diameter of the substrate W; in other words, multiple alignment markers are arranged ahjug the marker array 8 10, Further, the sensor holder 71)6 holds; sensor·; 868, 852. and 854. At least. one of sensors &5€>, 852 and 854 may comprise tire I;luminance irregularity sense;^-. the wavefront aberration measuring device or the uniformity sensor mentioned above. For example, the sensor
858 may comprise the iliusninaiice irregularity sensor. the sensor 852 may comprise the wavefront abetration measuring device, and the sensor 854 may comprise fcb« uniformity sensor. At least one of sensors 830, 852 nod 854 may no; be a sensor, but may be the cleaning desnee instead. At ions; one of sensors 850, 852 and 854 may be another type of sensot [6591 As Utowo in die righ; part of Figure 8, the mover 204 supports the further substrate holder 702, which is larger than the substrate holder 202 to support the further substrate W2. Because the further substrate W2 Is larger ;h:u; tbs sabstsate W, she marker assay 810 may s;«t be large enough {or long enough) to provide sufficient alignment markets tmdforto properly arrange alignment markers. In order to solve this issue. the sensor holder 206 is provided whh a further marker array 820, The further marker army 820 is larger than dse market army 810. Tosuppor; the furll-et marker array 820, the width 806 sobsianttally equals a sirs of '15 the further subssmte holder 702. meaning shat the width 860 is longer than She lengih 8=02 in ease the further subsirate holder 702 is larger than She substrate holder 202, [969] As shown in Figure 8, the sensor holder 20b has a first orientation in Ihe left part of Figure 8, and a second orientation In the right pan of Figure 8. ;n the first ehensasIon, the sensor holder 206 has a first angle along an axis perpendicular to a horizontal plane. In rise first orientation, the width 808 ss aligned along the y-axis a sd the length 802 is aligtted along the x-axis. The first orientation may be defined as an astgle along the z.fAxis of 6”. In the second orientation, the sensor holder 206 has a second angle along the axis perpendicular to the horizontal plane, wherein the flrrt angle is different from the second angle, in the second orientation, the length 802 is aligned along the y-axls and she width 800 is aligned along the x-axis. The rccof-d oris nJ a; ion may he defined a;; a« angle along tee x-axis of 56®.)_{{} K)} nbodlmeat. the difference between the angle in the first orientation and the angle in the second orientation may be a value other than 90, for example 3iP, or 45“. or 12(T or 18Q“. The shape of she sensor holder 268 may be diftesestt from a rectangular shape, for example triangular or T-shaped, [661] In an embodiment, the sensor holder 206 has a length 802 and a width 800 shat is suitably large for both the substrate holder 202 and the further substrate holder 702 m only ;he first orientation. Alternatively, two sensor holders 296 are provided, wherein one sensor holder is large!^- than the other sensor bolder, tflfslj In ass embodiment, the sensor holder 206 is arranged to receive a radiation beam tor an exposure beaut) from the substrate bolder 202. For example, the projection system PS propagate:· the exposure beam to the substrate holder 202. Via the substrate holder 202 at least pari of the exposure beam is d-reefed to the sensor holder 206. In an embodiment. the substrate holder 2.02 composes a murker 830. The projection system PS ex poses the srsarker 830 with she exposure ix-am to project an image on the marker 330. The erpostJfe bento comprise:; iisfartruslron ttbotit the image projected on the marker 830. As the exposure beam propagates through the marker 830 and to the sensor holder 286, information about the image is propagated to Use sensor Isoldes· 206. The sensor bolder 206 may he provided with a detector 840 to receive tlx: exposure heatrt and to provide tor gsueraie) a signal representing the inl’ormatton about the image projected tm the marker 830, For example, the information may be a position of the image on the marker 830, an interference pattern between the image and the market 830, a tiissortion of the image as projected ou the marker 830 or jah Imeaslty of the exposure beam. io addiliosi to the detsxtor 848, she sensor holder 286 may be provided with at least one additional detector. One of the at leas: one edditiossal detector may be arranged on a side of the sensor holder 206 that is different from the side of the sensor holder 206 on which the detector S-IO Is artutiged. For example, the detector 88-0 is arranged on the 'title of length 803 arid the additional detector is arranged on d-e side of width 800, The additional detector may face the substrate holder 2-02 or the further substrate holder 702 when the sensor holder 206 is irt the second orientation.
[063] hs an emix-diment, the marker 830 and the detector 848 may he components of an aerial image measuring device configured io measure an aerial image of a pattern projected by the projection system PS. In this- context, the marker 830 may comprise a fiducial plate or may comprise multiple fiducial plates. The defector 840 may provide information for* generate a signal represenltng information) about an aerial image I in other words, an aerial image measuring device measures an aerial image; when the substrate holder 202 and the sensor holder 206 are both supported by the mover 204. The detector 840 may provide htfonnation for generate a signal representing loforoxuion about an aerial image when site suhstraSe holder 3.02 and the sensor holder 206 perform the move in uatstm.
[884j In an embodiment, the defector is not arranged on I he sensor holder 206, but somewhere else, such that the sensor holder 206 is moveable relative to the detector. For example, the detector 848 may lx: arranged oa tlx- mover 284 or the detector 840 may be arranged on a stationary frame, in this embodiment.
the sensor holder 206 may be provided with sn optical component to direct the exposure beam Io the detector 840.
[065] As further depicted m Figure 2 and Figure 9, the exposure apparatus 200 may comprise an exposure device, e.g., projection system PS, and a mestsuretnent device 2.2.0. The exposure device. A arranged to exposure the substrate W wish the exposure beam. The measurement device 220 is arranged to provide measurement information of the substrate W (I.e,, arranged to measure the substrate W). The exposure device and the measurement device 220 are dlsksssi to each other. The mover 28* Is atranged ft; support the substrate holder 202 while near the exposure tie vice.
[066j The measurement device 220 may be any suitable device arranged to provide measurement information of the substrate W (i.e., arranged to measure she substrate W). For example, the measurement devies 220 may provide οέ j£ïiT::-ï’:ï>;sf.3<rï> nb-sm a heigh- profile of the st-bsifafe W, e.g., about the harness of the substrate tV. Information about the height profile may be used to position the subsitste W to a certain ε-position during exposure of a certain target portion €, to create on in-foens image on the target portion €· Additionally or aheraatively, the measurement device 220 may be arranged to provide information about, bs-plane. deiosmatiort of the substrate W. For example, the measurement device 220 may piovldc information about the positions of substrate, alignment marks Pi, 02 on the substrate W. The information shout the potations of substrate alignment marks FI, F2 may bo used to determine foe positions of the substrate alignment marks Pi, P2 relati ve to each other ot to compare she information with reference information. The information abom in-plane deformation may be used to position the substrate W to a.
1-3 certain x- amt y position during exposure of a certain target portion C, to create an image at a correct s-and v-position on the substrate W, !&& ] The measurement device 220 may comprise multiple alignment sensors ns disclosed in the US patent application US 2OO-9'-O233'234A1, hereby incorporated by refetxmce. hi other words, the measurement device 220 may comprise an allgametit system that comprises such muIripie alignment sensors.
Alternatively, the alignment system may comprise a single alignment sensor. The substrate W may I» tnovetl relative to -he siagie alignment sensor during an ahgnoiem opera-ion so the substrate «ligament murks PI, P2 face the single alignment sensor subsequently. .During foe alignment operation, the alignmem sensor may generate position information, which is a type of measurement infotxnaffon, based on the positions of the substrate alignment marks PI, F2; in other words, the alignment sensor may measure the £3 positions of the substrate alignment marks F i, 02. Additionally or alternatively, during the alignment operation, the alignment sensor stray generate position information based on the positions of overlay marks, which may be located In a target portion C. Additionally or alternatively, during the alignment operation, the alignment sensor may generate position information based no the positions of both rite substrate’ alignment marks PI, P2 and overlay marks; It; oilier words, the alignment sensor may measure the positions of both the substrate aiigntrsttei. marks Pi, F2. and overlay marks.
[068j T he exposure device and the measurement device 220 ore distant to each other, so when the substrate W is at the exposure device, the substrate W is not at foe measurement device 220 and vice verst». The substrate W may be moved from a location, where the. measurement device 220 performs tneasnrements to provide the measurement information, to another location, wherein foe exposure device exposes the substrate W. hi art embodiment, the exposure device and the measurement device 220 may be adjacent to each other. For example,, when one edge of the substrate W is at the measi-remeni device 220. anofher edge of the substrate W is at the exposure device.
[0fs9J hr aa embodiment, sec Figure 2, -he mover 204 is arranged to support tbs substrate holder 202 while file substrate holder 2.02. is near the exposure device. A siafion&ry support 21 ö is provided to support atsoiliet substrate holder 2 1 2 while the other substrate holder 212 is near the measurement device 220, The other subsume holder 2 i 2 may he the same or si mi hu' to one of the subs· rate holder 20 . and the further snbs-mts holder 70. , The stationary support 210 may be provided with an at tuatot system to move ska other substrate bidder 212 relative to the stationary support 210. 'Fhe actuator system may be part of a move meat device
S 220 arranged to move the other substrate holder 212 while supported by the stationary support 21.0. For example, the movement device 2.30 comprises a robot arm arranged to move the other substrate holder 212 in the X- and v-direction. fhe movement device 230 may compose multiple robotic antis. The robot arm may be arranged to rotate the other substrate holder 212 along the z-axis. In other words, during operation of sks measnremei-f device 220 (eg.. during iko alsgument operation), the movement device .3O mny move the >ther subsirate holder 2l 2 with resect io the stationary support 2i0 in the horizontal directions. In as; embodiment. the other substrate holder 212 is; provided with one of the magnet array 730 and the cosi army 740. The actuator system ntay be partly formed by the one os'· the magnet array 730 and the coil array 740. Another pars of the actuator system may be- arranged on a top surface of the stationary support 210. For example, the top surface is provided with an array cf magnets or an array of coils. The array of magnets or the army of coils may be arratiged in a 2fj-ansy extending in both ihe x-direction and She y-dsreetion. Io brief, during operation of -he measurement device 220, the other substrate holder 2; 2 may be moved with respect to the stationary support 210 fe.g.. in the honzontal directions } by the actuator system (or part of the actuator system) provided on the other substrate holder 212 itself.
[070] in an embodiment. the exchange mechanism 208 may be arranged to transfer the other substrate holder 2 I 2 from the stationary support 210 to the mover 204, Additionally or alternatively, the exchange mechanism 208 may be arranged to transfer the substrate holder 202 from the mover 204 to ike stationary support 210, The exchange mechanism 70S may move the other substrate holder 212 while the other substrate holder 212 is supported by the stationary support 21 0 during operation of the measurement device 220. The movement device 230 and the exchange mechanism 208 may be arranged and operated similarly.
The movement device 230 and site exchange mechanism 208 may he -ainniianeonsiy operated at different locations in the exposure apparatus 200, For example, as depicted in Figures 2 and 3, the movement devtce 230 may bold (and/or move) the otiter substrate holder 212 while the exchange mechanism 208 ntay hold iand/or move) she sensor holder 200, [071 ] The top surface of the stationary support 210 may be provided with gas outlets hi provide a gas film between the top surface and the other substrate holde 212. The gas film may function as ;s gas bearing, supporting the other sisbsUate holder 212 without physical contact hetsveen the other substrate holder 212 and the top surface. Facts of she gas outlets may be provided with a valve, Ihe valve may be arranged u> epen when ihe other:-:ubstrate bolder 212 is rsea·· os' above she gas outlet and may lie atrauged is; close when the other substrate holder 212 is sway from the gas outlet. The gas provided by the gas outlet may comprise art, nitrogen or assy other suitable gas,.
[872] In an embodiment as shown io Figure 9, the exposure apparatus 2ÖÖ may be provided with a first encoder head 950 and a first sessie 915. The stationary support 2K1 composes ss recess for holding the first encoder bead 93C>. The fsrss scale 9; 5 is arranged at a bottom surface of the other substrate holder 212. The
S first encoder head 910 faces the first scale 91.5 while the other substrate bolder 212 is near or at the measurement device 220 arsd Is arranged to provide for generate) a fitst Signal representative of positional information of tbs; other sobtarasc holder 212 hot example, the first encoder bead 910 may provide for generate} a signal representing the position of the other substrate holder 212 along the x-axis. and/or along the y-axts and/or alostg the z-a.xis and/or a roiatloss about the x-axIs, and/or a rotatlot: about the y-asis,
IG and/or a rotation about the r.-axis. Tbs frat encoder head 910 may be an encoder head system comprising snoitiple encoder head'· attd/or comprisir·e other position sensors than eocoder heads, for example capacitive or Interfcronsettic sensors. Such an encoder head system may also be. referred to as a position measurement device or a position measurement system |0 3] The first encoder bead 916 may he coupled to the stationary support 210 vsa a dynamical isolator.
IS The dynamscal Isolator may comprise a mechanical spring or a damper. The mechanical spring may be a helical spring or a leaf spring. The «amper may comprise a vssne-sis damper or a vlscoelasale damper. The dynamical isolator may comprise an actuator, a sensor and a controller. The wtwor may be arranged to detect a vibration of the stationary support 210. Batted on mpu; from the sensor, the controller may control •he actuator it) actuaic so as so prevem the vibration of the stationary snpport 216 to vibrate, she first encoder head 916, For example, the actuator is a piezo-actuator or a reluctance actuator or a Lorentz actuator. Alternatively, the sensof, controller and actuator may be arranged so have she first encoder head 910 maintain a desired position relative to a reference, independently of vibrations of the stationary support 210. The reference may be she measurement device 220 or the exposure device.
[074] As: shown in Figure 9, the exposure device, e.g.. projection system PS, is supported by a frame 9«6.
in an embodiment, the exposure device is movable relaslvc to the frame 940. When the exposure device is able to move relative to the frame 940, the exposure device is able to change the path of the exposure beam For example, when the exposure device is able to move In the x-directlon, the exposure device is able to sisil't the path ol the exposure beam its the x-direetiors. By shifting the path of the exposure beam, a larger portion of the substrate W can be exposed by the exposure beam without movement of the substrate holder
202, Alternatively or in addition, by shifting the path of the- exposure beam in the direction of movement of the substrate bolder 202. a -certain pari :>f the sebsirree W car; he exposed for a Irsrtger period of time. The exposure device may be moveable relative to the frame 9«6 along the x-axis, the y-axss or brstb. The exposure device may be moved by art actuator suck as a pie.gt; actuator or · i,.ore.ntz rsetositor. The exposure device may he guided by a get dirt g device. The guiding device may comprise flexible elements soth as leaf springs. The guiding device may comprise a gas bearing. Alternatively or in addition, the projection system PS may be supported by the 1 ram» 940 via an AVIS t Active Vibration Isolation System). Such an AV IS may comprise a damper, a spring, a position sensor, and/or an actuator {such as a voice coil motor). In nn embodiment, the exposure device is movable with respect to the frame 94Ö io the vertical direction, i.e,,
S along the z.-axis, Use AVIS enables to attenuate vibrations shat eat) be propagated between the frame 940 and dte projection system PS. An example of an AVIS, which cars be used in the context of the invention, is disclosed in Japanese patent application publication No. JP 2016-194599A. hereby incorporated by refereetce, .As vibration^ are a typical type of o fsdesis-ed disturbance that deters orates the imaging quulhy of a lithographic apparatus, an AVIS can improve the imaging quality of a lithographic apparatus without deteriorating the overall productivity.
[9751 In an embodiment, she exposure appasasss 200 is psovldeci with a further measurement device 950 arranged to provide further meavureoienr information cd the substrate W fi.e., arranged so perform a further nseasurernesu of the substrate W), The further measurement devtcc 950 is closer to the exposure device (e.g,, she projection syssesn PS.; than the meinn^-emetst device 220. The rneastsrcrnent device 220 ss further awny from the exposure device {e.g., she projection system PS) than the further measurement device 950. The further measurement dcvjce 950 may be similar to the measurement device 220 msd may provide similar information abtsus. she substrate W. For example. the further measurement device 950 may be the same type of a settsor system a:; the measur-emeus device 220, but she jyseasu-ement device 220 may provide wish information about rise substrate W at a better accuracy than the further measurement device 950 by salting a longer measurement time; in miser words, the E'urther measurement device 950 may take less measurement time to complete n n'seissuse-r-ei-t. of the substrate W, The 1 urther measurement device 950 nay perform a meusurcment of the substrate W while the substrate holder 202 is supported by she mover 204.
[076] Information provided by she fsirther nseasu-esrteot device 950 essay he used to determine she z-positiost of she imcrace -of she snbstraie W relative to as> image plane of she exposure device. The further measurement device 950 may comprise a levelling sensor system that provides information about u height profile of sise. substrate W, e.g, a flames:; c-f she substrate W. A level ling sensor system may also be referred to as «St tsulo-locus sysSesa. The control usds saay make use of both lbs; informal tots about she height profile of the substrate W as welt ss mlormation provided by the aerial image measuring system to determme a positionssl relationship between she- substrate W and the patterning device MA. The cotsirtsl unis may process ntsdtiple signals obsalrsed by the levelling seswor system and the aerial image ntcassitisq: system to detersrssne the positional relationship between 1 he substrate W ;md She patserastsg device MA. The control unit may process multiple signals and/or execute; ass algorithm as disclosed m she PCT-application publication No, WO 2005/096354A1. hereby incorporated by -efereeee.
[877] The levelling sensor system may comprise a light source so provide a beam of radiaoon. The beam of radiation (e.g.. hid'!·; may be directed to the fop surface of file substrate W, The beam of radiation is reflected by the top surface back to the levelling sensor system. Based on the refieetion (I e., based on the reikwtcd light), the ievHIIng sensor system may generate a signal representative of she height profile. The light source may provide the beam of radiation with a plurality of wavelengths and/or with a continuous spectrum. 'The radiation beam may comprise infrared light, visible light and/or UV-light. The light source may comprise ;»t LED (Iight-aml-tiag diode) or may comprise multiple LED's. The light source may have LED's wkh different colours such as orange, red, green, cy&n. blue and violet ie.g., having a peak wavelength of or about 630.605, 560. 505.4 0 or 405 ttro, respectively}. The leveling sensor system may provide tiie beam ci radiation ai ; sianfed angle with the substrate W. The leveling sensor system may
IO provide the beam of radiation such that the beam of radiation is incident on ;.i large par) of ihe sobs-taie W, for example, along a line across the substrate W.
[0 8j information of the further ineasiirsaxmt tie vice 960 may be used to determine the x·· and y- piisisions the substrate W relative to an image of a reference mark of the patterning device MA, for example the mask alignment marks ML M2. Additionally or alternatively, the further measurement device 950 may provide
IS information about she positrons of substrate alignment marks El, P2. osi the substrate W; in other words, the further meastMemeni device 950 may measure the positions of substrate alignment marks Pi. 02 on the substrate W. The information about the positions ol substrate alignment marks Pl, P2 may fee used to determine the positions of the substrate alignment marks PI, E2 relative to each other or to compare the info; row loti wt-h reference information. The further measurement device 950 may comprise a wafer
2S alignment sensor system that provides information about implune deformation of the substrate 5V. The further measurement device 950 may comprise, multiple alignment sensors as disclosed in tile; US paterd application US 2009-0253254,9.1, hereby incorporated by reference. In other words, the wafer alignment sensor system may comprise such multiple alignment sensors. Alternatively, the wafer alignment sensor system may comprise a single alignment sensor. The information about ia-plaae deformation may be used
SS io position the substrate W to a certain x- and y-position during exposure of a certain target portion C, to create an imago at a correct x-and v-positsoit on the substrate W. The control unit may make osc of both the information about the. imphm·-; deformation of the subs-rate W ami information provided by the aerial image measuring, system to determine a positional relationship between the substrate W and the patterning device MA. The control unit may process multiple signals obtained by the wafer alignment sensor system and the aerial image meast-ritsg system to determine ihe posit it>o&l relationship between the substrate W and the patterning device MA. The control trol; may process rotshlple signals and/or execute an algorithm as disclosed in the PCT-spplicadon publication No. WO 2Ö07/097579AÏ, hereby incorporated by reference. (079] in n« embodiment, the exposure apparatus 200 comprises a second encoder bead 920 and a second scale 925. The second scale 925 is arranged at a bottom surface of the substrate· bolder 202. The second encoder head 720 is arranged to face the second scale 725 so as to provide tor generate) a second signal representative of positional Information of the substrate holder 202. The second encoder head 920 faces the second scale 925 while the substrate holder 202 is near or at the exposure device, e.g., the projection system PS. and is arranged to provide (or generate) a second signal representative of positional information or the substrate holder 202. Pot example, the second encoder head 920 may ptovtde tor generate) tbe second signal representing, the position of the substrate holder 202 along rhe x-axis, and/or along the y-axls anti/or along the z-axis and/or a rotation about the x-ods. and/or ;t rotation about the y-axis, and/or a rotation about (be z-axis. The second encoder head 720 may be an encoder head rystens comprising multiple encoder bends atid/orcompdiiiftg other position .sensors than encoder heads, for example capacitive or interferometric sensors. Such an encoder bead system may also be referred to as a position nteasurement device or a position measurement system. The second encoder bead 920 may be mounted on a measurement arm. The measurement arm may be attached to tbe frame 7-10 and may extend below the substrate holder 202. The second encoder bead 72(5 may be located along tbe optical axis os'-ba exposure device.
[08@] The substrata holder'202 attd She other substrate holder 702 may exchange position such that She first vocoder head 91 0 faces the second scala 72.5 art-J such that the second encoder head 920 faces tbe first scale
915. In that situation, tbe first encoder bead 710 may provide tor generate) the fitst signal that is representative of positional information of tbe substrate bolder 202, in that situation, the second encoder head 920 may provide (or generate) die second sigtaxl that is tepresentabve of positional information of the other substrate bolder 702, (OS!.] bi no embodiment. She exposure apparatus 200 comprises a third encoder head 750 and a third scale 935. The fb.ird scale 935 is arranged at a bottom surface tift.be sensor holder '206. Tbe. bard encoder bead 720 ss arranged te face tbe Ihird sente 9.35 so ns to provide (or generate) a third signal representative of positional information of the sensor bolder 206. Tbs third encoder bead 930 faces she ihird scale 935 while the sensor holder 206 is supported by the exchange mechanism 208. and is arranged to provide the third signal representative of positional information of the sensor bolder 206, For example, tbe third encoder head 950 may ptovtde the third signal representing tbe position of the sensor bolder 206 along tbe x-axis, and/or along the y-axis and/or along the z-axis and/or a rotation at-on the x-axis, and/or a rotation about the y-nxis, and/or a rotation about tbe z-axjs. 'The third encoder bead 9.30 may be an encoder head system comprising multiple encoder heads and/or comprising oilier position sensors than encoder beads, for example capacitive or interferometric sensots, Such an encoder bead system may also be referred to as a position measurement device or a position measurement system. Tbe third encoder bead 730 may bs mounted on a further measurement arm. The further measurement arm may be attached to the frame 940 and may extend below the sensor holder 206.
(882] in an embtxbment. the further substrate holder 702 may have tbe same size as tbe substrate bolder
202 of may have a different size. For example, in the embodiment of Figures 3 and 9, in a lithographic apparatus that is compatible only with a single size of substrates. the ts h<·.·· ttuhsirt-Se holder 212 artd/o·· the fun het· substrate holder 702 may be identical to the substrate holder 202. A.itematively or additionally, in a lithographic apparatus that is compatible only with a single size of substrates made of different materials, die further sishstrt-te holder 702 may have she same size as the substrate bolder 202, bsst the fssrthet' substrate bolder 732 may be made of a different material from the substrate holder 202. Ahernstively. in the embodiment of Figures 7 and 8. in a lithographic apparatus that is compatible with multiple sizes of substrates, the further substrate holder 702 may have a different size than the substrate holder 2Ö2, and the further substrate holder 702 may be replaceable with the other substrate holder 212, whose size is the same as the substrate holder 202, Additionally or alternatively, the further substrate holder 702 may bold a different type of substrate. W than a substrate o« the substrate holder 2.02; e.g., a dummy wafer may be liiadeil oa the substrate holder 202 when the snbst rat e W is loaded on the further substrate holder 732 nt a certain moment during operation of a lithographic apparatus, in an embodiment, the exposure apparatus 200 comprises two substrate holders 202 and tsvo further substrate holders 702. The >w substrate holders
20.2 may have the same size. The two further substrate holders 702 may have the same size or may be larger that! the two substrate holders 202, In a first operation mode, the exposure apparatus uses the two substrate holders 202 io hold subs’,rales W, while storing the. two further substrate holders 702, for example at a storing location in the exposure apparatus 200. The - wc farther substrate holders 702. may remain idle (I.e., remain unused) during the first operation mode, in a second operation mode, the exposure apparatus uses the two further substrate holders 702 to hold substrates W, while storing the two substrate holders 2.02, for example at the stoong location in the exposure apparatus 200. The two substrate holders 202 may remain idle (i,e„ remain unused} during the second operation mode, [083 j Thu sensor holder 206 may take, the position of the substrate holder 202 such that the second encoder head 920 faces, she third scale 935. in that situation, the second encoder head 920 may provide (or generate) the second algnal that is representative of positional information of the sensor holder '206, in an embodiment, there is ptoyidsd an exposure apparatus eotuptisistg the substrate holder 2.02, the sensor bolder 206. the mover 204 and the protection system PS. The substrate holder 202 is tor bolding, the substrate W. The sensor holder 206 rs lor bolding s sensor. The mover 204 ts atranged for moving the substrate holder '202. The projection system PS is arranged to provide a beam of radiation onto the substrate
W. During exposure, the projection system PS provides the beam of radiation onto the substrate W when the sensor holder 206 ts decoupled from the mover 204. The mover 20« may couple with the sensor holder 206 when the sensor measures a property of the projection system PS or the radiation beam.
[OSS] The exposure apparatus may comprise the exchange mechanism 208 for providing the sensor bolder 296 to the mover 204 and for removing the sensor bolder 2(16 from the mover 204.
[386] The mover 204 may be arranged to move a further substrate holder 702 for holding a further substrate W2. The size of she further substrate W2 may he different from the size of the substrate W. By configuring the exposure apparatus In such a way. the exposure apparatus can flexibly and efficiently be compatible with different sizes of substrates. A single exposure apparatus that is able to expose substrates with differed δ sizes can improve the CoO (Cost of Ownership) and/or the TCO (Total Cost of Ownership), comparing to the case that each of multiple exposure apparatuses ts dedicated to exposing a specific size of substrates. [f)87j The sensor holder '206 has a leugth and a width. The length may substantially equal ;s s;xc of the substrate holder 202. The width substantially may equal ;s size of she further substrate holder 02. The length and the width may be different from each other.
'10 (988] The mover 204 may be arranged to support the sensor bolder 206 m a firs orientation and in a second orientation. In the first onentation. the sensor holder 266 has a first angle along ar axis perpendicular -o a horizontal plane, In the. second orlctifafiosy the sensor holder 206 has a second angle along, the axis perpendicular to she horizontal plane. The first angle is different from the second angle.
[989] The mover stray he arranged to decouple from the substrate holder so as to move without moving she substrate bolder [090] The sensor holder 206 may be arranged to receive the radiation beam trom the substrate bolder 202. The subs rate holder 202 may comprise & marker (e.g., the. marker 830). The radiation beam may comprise information about an image projected on the market; The sensor bolder 296 may be arranged to propagate the radiation beam so a detector (e.g.. the detector 846). The sensor holder 206 may be movable missis vs to she detector.
[09I] The exposure apparatus may comprise an exposure sfcvicc «nd a measurement device. The exposure device is arranged to expose the substrate with ssn exposure berara. Tbs measurement device is arranged to provide measurement information of the substrate W. The exposure device and the measurement device are distant to each other. The mover 2(14 Is arranged to trapport the substrate holder 202 while near the exposure
2» device.
[092] The exposure apparatus may comprise the. stationary support 210 arranged to snppnrt the substrate bolder 2Ö2 while near the measurement device.
(093] The exposure apparatus may comprise a first encoder head 910 and s first scale 915. Tlte slanonaty support 210 may comprise a recess for holding the first encoder bead 910. The first settle is arranged at a bottom surface of the substrate holder 202. The first encoder head 910 faces the first scale 915 while die •rohssrate holder 202 is near tlte measurement device 220 and is arranged to provide a sigrsttl representative of positional information of the substrate holder 202. The first, encoder head 910 may be coupled to the stationary support 2.10 via a dynwtrricisA isolator The exposure apparatus may comprise a movement device arrangi.il So move she substrate holder white supported by the stationary support, 'The exposure apparatus may comprise the frame 940 for supporting the exposure device. The. exposure device may be movable relative to the frame. The exposure apparatus may comprise a further measurement device 950 arranged to provide further measurement information of the substrate W. The further measurement device 950 may be. closer to tee exposure device than the measurement device.
1094] The exposure apparatus may comprise a second ertcc-der head 9 2b. The second encoder head 920 Is arranged to face tee first eerde 915 so as to provide a second signal representative of positional information of the substrate holder 202.
[(195] The exposure apparatus may comprise a third encoder head 930 and a tend scale 935, The third scale 935 ;s arranged at a bottom side of the sensor holder 2Q6. The third encoder head 930 is arranged to face the third scale 935, so as to provide a third signal representative of positional information of the sensor holder
206, ]096j The embodiment of the lithographic apparatus of Figure 9 may he operated in the following way. The following way is iliutdrs.ted in Figures IÖA-101 in a schematic top-view.
[Ö97] A first substrate in a first lot. W13.. S is loaded on the further substrate holder 702: see Figure IÖA. The first substrate in rite first let WI Li js also refereed to ns the first subsfra-e WJL! in -his embodiment. The further sobstrate holder 702 moves the. fust substrate W1 LI to the measurement device 220. The measurement device 220 provides ntsasurentem information of the firs; substrate W1LI. The measurement informalion. is wafer alignment information, which is information relating to she shape and the position of the fitst substrate W 1.1.. 1. , The measurement device 220 provides fine wafer alignment information, which is £9 bused on a large number of measurements, e.g. based on measuring the positions of a large number of the substrate alignment marks relative to one another or to compare the information with reference information, fa this embodiment, til I substrate alignment marks on a wafer, e.g., 96 substrate alignment marks on a wafer may be measured by the measurement device 22:0. Substrate aligntnene marks car a wafer may also he referred to as wafer alignment marks. Additionally, the measureeoent device 220 may also measure overlay marks on the first substrate WILL The fine wafer alignment information provides accurate information about a large part of the surface (or the entire surface I of the first substrate WILL At this moment, the sensor holder 206 may be located beneath the projection system PS. and the sensor on the sensor holder 206 tra-y measure the property of the projection system PS, the. property of the ae rial I erase, and/or the property of the exposure beam, [l)9Sj As depicted tn Figure 108, after the measurement device 220 has collected the measurement infortriatlon, the movement device 2.30 transpost;; tee firsi. swbstrafe V 1 LI from the further substrate holder 702 to Ute substrate holder 202. The movement device 23Ö is arranged to pick up the first substrate WILI item the furtlter substrate helder Q2 atsd io place tee firsi substrate W1 L I onto Ihe stsbsistee holder 202. in other words, ihe movement device 230 is configured to ssnfoad the firth substrate Wl LI from the further substrate holder 702 cod then to load the hrst substrate Wi 1.. I otj the substrate holder 21)2 At thre moment, dse movement device 2. SO may load a second substrate in the first. hst W2L1 on the further substrate ho;h;;t 702. The second substrate its the first lot W2LI ss also referred to n;; the second subslmte W2L1. In rut embodiment, the movement device 230 may comprise multiple robotic arms and/or multiple Bernoulli chucks to enable to simultaneously handle the fitst substrate W1L1 and the second substrate W2LI. It; oiitet wtxds, thr; movement device 230 is -sot only conftguretl to unload a substrate from the further substrate holder 702 but also configured to loud a substrate on the further substrate Isoleer 702 in this embodiment [099] As depicted it; Figure 10C, the substrate bidder 292 locates site fust substrate W11.. I ;st {or beneath s the further measurement device 950, The fnrtiter measurement device 950 provides further measurement information of the fsrst substrate WILL The further measurement information is further wafer alignment information, which Is InforroatioEi relating to the shape and the positron of the first sufcsitate W IL.;. The further measurement device 950 provides coarse wafer alignuxott information, which h; based ;>ts a small number of srtcasuretosnts. e.g. based on measuring ike positions of a snsall number of the substrate alignment marks relative to one another or its compare the iafomuiitoti with reference information, In this embodiment, a smalt number of the substrate abgnrausrt marks may, c.g.. be between 3 and 16 substrate alignment marks. In general, less measurement time is necessary for measuring a smaller number of the substrate alignment marks; in other words, a shorter time in operating the further measurement device 951) is necessary to obtain the coarse wafer alignment information, comparing to the time «ecewary to obtain Iroe wu I era sign meat information by the measurement device 220. When the measurement devtce 9.50 ss collecting the further measurement information, ike sensor holder 206 Is located beneath the projection system PS. The sensor bolder 206 may, e g._: he supported urui/or moved by she esehnrtge mechanism 283 as depicted in Figure 5. When the further measurement device 950 ss collecting the further metisurenumt information, the sensor on the sensor holder 206 is measuring the property of the projection system PS, the property of the aerial linage, arat/or the propert y of the exposure beans. When the further measurement device 950 is collecting site further measurement information. the measurement device 220 is collecting, measurement information from ike second substrate W2LI. which has been loaded on the further substrate bolder 782 and is held by the further substrate holder 792.
[13100] After the. further measurement device 958 has collected the further measurement information, i.e,, as soon as coarse wafer alignment information is obtained by the further measurement device 950, the mover 204 moves she substrate. holder 202 with the first substrate WI Ll beneath the projection system FS; see Figure I0D. The sensor bolder 206 is moved away from beneath the projection system PS. The sensor holder 206 may be supported and/or moved by the exchange mechanism 208 as depicted in Figure 9. When he first, substrate WlLl is beneath the projection system PS, she first substrate WHJ is expose;! wish the exposure beam to project the pattern on the first substrate WI Ll, Since a relatively short tune is necessary :-5 operating the further measurctnent device 950. which is kxt·ed closer to she proieebon systesst than the measurement device 220. this configuration is beneficial m improving the throughput pcrlbtrnaace of the lithographic apparatus, si the further measurement device 950 is located fits' away front the projection system PS, attd/or if another object: interferes with tire smooth movesreous of the sobshute holder 202 and the sensor helder 206, the shrocgltptsl performance of the lithographic apparatus will be deteriorated.
[01011 As: depicted in Figure 10E assd in Figure 9, during exposure of the ftrst substrate WILI on the substrate holder 282 (i.e.. during, stepping and/or scannis-g motions of site substrate holder 202 beneath the. projection system PS), the measurement device 220 continues measuring (collecting measurement information from) she second substrate W2LI on Site further substrate holder 702. During exposure of the first substrate W!LI oo rho substrate holder 202, the sensor holder 206 is located tor parked) at a place inside the exposure apparatus 200, where she sensoi holder 206 does not interfere with the stepping and/or scanning motions of the substrate bolder 2G2. and the measurement of the second substrate 5V2LI an the further substrate holder 782.
[8282] When ail targes pisrsisrsts C on the first substrate WII,I have been exposed, the snbstrare holder
2s)2 is decoupled front the mover 2C4, end the sensor holder '206 is coupled to ihe tnovet 204; fit itfiter words llte substrate holder 202 ettc the sensor holder 206 move 1st unison relatively Io She mover 20·* .as depicted 1st Figure I OF atsd Figure 4. The exchange mechanism 288 moves the substrate holder 202 with the first substrate WiLi to a substrate unload location as recognized in Figure I8G, When ihe exchange mechanism 208 moves the substrate holder 202 away from beneath she projection system PS as depicted io Figure 0. the mover 204 moves she sensor holder 2.06 beneath the proje-ctioo system PS, which allows the sensor on ihe sensor holder 206 to start measuring the property of the pmjecsiott system PS or the property of the exposure, beam ns depleted in Figure iOH, Meanwhile, the measurement device 220 continues collecting measurement infonnation from the second substrate W2L i on the further substrate holder 702.
[8103] At tbs substrate onload location also us depicted in Figure. Ι0Β, the first substrate Wl L is
2S unloaded from the substrate holder 202, for example, by ihe movement device 230: the movement device 230 may he operated similarly to how the movement device 230 has unloaded the ftrst substrate W1LI from Ihe further substrate holder 702 as described in Figure 10B. .Alter the fitst substrate WILI is unloaded from the substrate holder 2.02, the first substrate W1L1 leaves tor is transported to the outside of} the lithographic apparatus; e.g.. the first subsirate WILI is tximained tan FOUR,
18184j After the ftrst substrate WI Li is unloaded from the substrate holder 2.82, the substrate holder
202 is coupled to she mover 204 as depicted hr Figure 181, hr other words, Ute substrate holder 202 and the sensor holder 206 move ir, unison relatively to the mover 269 as depleted in Figure 4, When the substrate bolder 202 hr coupled to the mover 284, the sensor holder 206 may be supported snd/or moved by she exchange mechanism 208 ex depicted its Figure 5. .Alternatively, she sesrsor holder 206 may remain supported by the mover 20« as depicted in Fisnre 4. When the sensor bolder 206 s.s located beneath the projection system PS, e,g„ by the exchange mechanism 208, by the mover 204, and/or by the actuator equipped on the sensor holder 206 itself, the sensor on the sensor holder 206 may measure the property of the projection system PS, the property <4' the aerial image. and/or the; property of the exposure beam. The movetrtea! device 231) transports the second substrate W2IJ front she further substrate bidder 702 so the substrate holder 202 similarly to how the movement device 230 has transported the first substrate Wit I from the further substrate holder 702 to the substrate holder 202 as described in Figure iOS. The steps descobed above relating to she first substtaie W1LI are sow repeated for she second substrate W2I..1. When the steps described above are completed for ah substrates In she first lot, site same sir simitar operations may be repeated for substrates in a second hat, (01.05] Figure ÏÖA depicts shut the exposure apparatus Is arranged so hold she first substrate W i Li on Use further substrate holder 702 while Ihc measurement device 220 Is acquiring the measurement information from the first substrate WILL At this moment, the sensor holder 206 may be located beneath the prnjecifnn system PS. and tbs-: sensor on she sensor holder 206 may perform ;t measurement. Figure IOC depress that (he exposure apparatus is arranged io bold the brst substrate WIL I on the substrate holder 202 while the further measurement device $50 is acquiring the further measurement information from the substrate WILL At this moment the measurement device 220 can already start measuring {acquiring the measurement inforn-silon from) the second .substrate W2.LI on she further substrate holder 702, Figure 9 and Figure 10E depict that the measurement device 220 continues measuring the second substrate W2L1 on the further substrate holder /02 while the first substrate WtLs on the substrate holder 202 is exposed. Figure 10G depicts that the tneasuretnem device 220 continues trteasuring the second substrate W2L1 on she further substrate holder 702 while the substrate holder 202 is moving away from She projection system PS towards a substrate unload location. Figure I OH depicts that the measurement device 220 continues measuring tire secottti substrate W2Li on Use further substrate holder 702 while tbc fitst substrate W- Li is
2S reloaded from the substrate- holder '202, At this moment, the sensor holder 206 may he located beneath the projection system AS. and the sensor on the sensor holder 206 may perform a measurement.
(0.106.1 By configuring and operating the lithographic apparatus in such a way. the measurement device 220 has a maximum amount of time to collect the measurement information without limiting the throughput performance ¢:-/the lithographic apparatus since is is no- limited by die measurement time required by the measurer-rent device 220. Therefore, better imaging quality can he achieved without deteriorating the overall productivity. In other words, better overall productivity can he achieved while simultaneously qualifying for a certain sufficient imaging quality. la contrast, if a longer measurement time h; spert· by the further measurement device 950 io,g,, if fine wafer alignt-rent information is obtained by the further measurement devtce 950 , the lithographic apparatus will sulfer from a trade-off between the throughput performance and the imaging quality. Such a trade-off is also generally observed in a lithographic apparatus that comprises a single wafer stage and a single wafer alignment system. Additionally, the sensor ot» the sensor holder 206 can measure the property of the projection system PS. the property of the aerial inrage, and/or the property of the exposure beam without interltïriog with exposure of δ a substrate; hence, better imaging quality (and/or better uptime performance. e.g., in case the sensor holder 206 cotnotises a cleaning device) cart he achieved without deferioraiing the throughput performance. Additionally, the measurement device 220 and the further measurement device 950 do not increase a footprint of the lithographic apparatus, which is aiso called the exposure, apparatus, since the measurement device 2.2.0 and the further measurement device 950 are smaller (especially in the horizontal directions, I.e., t0 on the xy-plans) than the substrate hc-ldet 202, the further substrate holder 702. or the substrate W.
Consequently, the configuration of the exposure apparatus 200 is a solution to the stilemma between site overall products v-,.y, the Imaging, quality anti the economy of art exposure apparatus.
[0.1.Ö7] The control unit may drive (or control a position of; the substrate holder 2.02 bused on 1 he measurement snforrriai.ton and/or the further measurement information. For example, based on the measuremen! information and/or the further measurement information, the control unit may determine that a target portiost € is «<· si.;; aomutal position on the substrate W {i.e.. the posltlor; of a target portier, C on the substrate W wire» the substrate W is ssodeformed). Additionally or alternatively, bused on the measurement information and/or the further measurement information, the control unit may derive the position on -he (deformed) substtate W onto which art aerial image of site pattern should be projected. The
2d control unit may drive the substrate holder 202 and correct she position of she snbstraic holder 202 such that the target portion C is at a correct position beneath the projection system PS during exposure. An example of sucl: :t eonSfol unit, whicl- cuts Iso used its the context of the invention, is disclosed io japanese patent application publication No, JP 2002-35312! A, hereby incorporated by telereace, (OW&j Additionally or alternatively, based, on the measurement information and/or the further measurement information, the coni to! sash may control an optical property of art aerial image, at optical property of site projection system PS, or both of these. For example, the control unit may compensate for distortsots of an image to be projected onto the substrate W, aberration of the projection system PS, and/or itt-piane defotrnarioo of she aubstraSe W by controlling one or both of these optica! properties. These optical properties that the control unit controls may be magn-fication-X (he., magnification along the x-axls or In the stepping direction), magnification-Y (i.e., magnification along the y-axts or In the scanning direction), distortion, coma, held curvature, spherical aberration attd/or astigmatism, Coe or some of these optica! properties may be controlled by actuating tite position and/or orientation of optical elements tin the projection system P5) during exposure, during scanning and/or during stepping. An example of such a control unit, which can be used in the contex· of the invention, is disclosed in Japanese patent application pubbeatitra No. IP 2007-012673A, hereby incorporated by reference.
[0109] The control unit may use the fine ware alignment information as provided by the measurement device 229 to determine an accurate alignment correction for a distortion snap ·, The accurate alignment correction for the distortion map) may have linear components (or low-order components! and higher-order components to define the actual shape of tire substrate W compared to a nominal shape. These components of the distortion map may be mathematically expressed in terms of coefficients of a polynomial. For example, the fine wafer alignment information is based on an alignment mark a every targe! portion C or is based on a plurality of alignment matks as. every target portion C (e.g., the substrate aligumesU marks Pi. P2}. A deformation or distortion of the substrate W whhin a target portion C tie., wilfun an exposure field or within a dies may be referred to as an sntrs-field distortion. An overlay error at least partially induced fey da irstra-field distortion. may he referred to as art intra-field overlay error. A deformation or distortion of the substrate W between tiles or exposing fields may fee •’eferred to as an inter-field distortion. An overlay error at least partiulSy induced by the tnier-fleld distortion may be referred to as an rater-field overlay error. 1 ! an embodiment, the number of these alignment marks ss less than the number of exposure fields (or the number of sites). Aiterrtati vely. the number of these alignment marks equals the number of exposure fields (or the r.umber of dies), A deformation of ihe substrate W, such as betiding or warping or stretching, results m a displacement of the alignment marks relative to each other. Batted on the fine alignment information. She control unit may accurately determine the actual shape of the substrate W, The measurement device 229 may provide the fine wafer alignment information based on
2ö overlay marks, which may be located in a target portion C, and/or batted on substrate alignment marks FI, F‘2. which may be located ta between the target portions C, In an embodiment, the fint wafer alignment information, which con-a-ns information of a deformation of the substrate W. is based on the measurement of both overlay marks anti substrate alignment marks. 1 ! an embodiment, the summation of numbers of overlay murks and/or substrate atlsttmutn; marks on the substrate W. which are measured by the measurement device 22Ö. is greater than or equal to the number of exposure fields (or ihe number of dies):
e.g., if there are. 96 exposure, freids (or dies) on the substrate W. the summation of numbers of overlay marks aud/or substrate «fianmimt marks t>u the substrate W, which art rstettstsreri by Site meassitenteni device 229,, may be greater than or equal to 96, io general, wafer alignment information that is based on measurements of a larger number of minks (e.g., substrate alignment marks and/or overlay marks ou the substrate W( enables to more accurately determine the actual shape of fit·-; substrate W. Hence, when the measurement device 229 measures a ktrga number of marks on the substrate W, the imaging quality of the lithographic apparatus may Increase tor may be improved}.
[011(1] When the movement device 239 transports ihe fust substrate WILI irons tire further substrate holder 702 to the substrate holder 202, the actual shape of the substrate W may change into a new actual shape. However, the dtfl'crence between the acreai shape and fhe new actual shape typically has only low spatial frequencies. Based on a small number of measurements of substrate alignment marks, the further measurement device 950 may provide the coarse ahanmen informution. The small number may be in a range of 3 - 20, for example 16, Based ok the coarse alignment information and on the fine alignment information. the control unit may determine, the. new shape of the substrate W, Bucunsc the control unit is able sc determine the new shape of the substrate W in this way. the imaging quality of the lithographic apparatus may increase for may be improved), and/or better overall productivity can be achieved while simultaneously quahiytug for a sufFsemm imaging quality required for manufacturing ICs .
[0111] The fine wafer alignment information as provided by the measurement device 22Ö may be
SO implemented as a fine distortion map, i.e., a map of the surface of the substrate W indicating the amount of ihsttirtioti wim a Uiige detail. The coatse wafer alignment information as provided by the further measurement device 920 may he itnpiemcn-ed as a coarse distortion map. Le., a map of the surface of the substrate W indicating the amount of distortion with less detail. The control mm may combine (r r synthesize) the fine distortion map and the coarse distortion map so create a combined distortion map, which may also be referred to as a composite distortion map or an integrated distortion map. Based on the combined distortion map, the control unit. may control ‘die position of the. substrate bolder 202. Additionally or alternatively, the control oort may create a combined distortion map for each subsinrte in a lot (or for some substrates In a kst). For example, the. comtctl unit may create a fust combined distortion map for the first substrate W i 1.,I by combming (or synthesizing) a first fine dsstortion map and a first coarse, distortion map. which are snaps of the surface of the first substrate WI LI. Similarly, the control unis may create a second combined thstortson nutp for she second substrate W2LI by combining (or synthesizing) a second tine distortion mep and a second coarse distortion map, which are maps o the surface of fisc ’second substrate W2LI. Ahemat· veiv. the control unit may create a ’second combined disioriion map for any one of the other ssibsirale-; its the Iot. based on the tme disterrfott asap and ths coarse dtstemtor, map of the substrate,
Additionally or alternatively, the control unit may create a third combined distortion map for one of the ether substrates 1st a second lot, based on the fine distortion map and the coarse distortion u'ap of she substrate in the second lot.
[0112] Additionally or alternatively, based on a fme distortion strap and/or a combined distortion map, the control unit satay control ass optical, property of an aerial image, an optical property of Ibe projection system PS. or both of tiscso Based on the fine distortion map. and/or based on the combmed disforfion map, and/or based on measurement data of one of the sensors that the seasor holder 206 holds, and/or based on a Simulation model, the control unis may compensate for distortion of an image to be projected onto ths substrate W, aberration of tbs projection system PS, and/or in-plane deformation of the sub;:·rate W. The measurement data, obtained by one of the sensors ihat the sensor hornet 206 holds. may include a property of the projection system PS. a property of an acr-ul image. and/or a property of the exposure beam. The control unit may control one or some of the foilowing optical properties of an aerial image and/or the projection system PS: mag-ufication-X, magnification--Y, distortion, coma, field cotvatote, spherical aberration, astigmatism, or nay other types of aberrations, (0i 13] One or some of these optical properties of an aerial image and/or the projection system PS may be controlled by acfoabng the position and/or orientation of optical elements t wiih respect to the lens bartel, with respect to the path of the radiation betira B.. or with resp:x:t to ibe optical axis of Ihe projection system PS) during exposure, durisig scanning and/or during stepping. One or more of these optical elements in the projection system PS may he supported fey a lens holder tend/or may be actively actuated for controlled} fey piezo-actuators during exposure sn-f/or dating a scan.
[01.14] One or some, of these optical properties of an aerial image and/or tbs projection system PS may he actively contrei led by a deforntabic mirror In the projection system PS. An example of such a tk'iormable mirror, which cun lie used in the context of the -overtiion, is discloses· in Japanese paietst application publication No. JP 2013-161992A. hereby incorporated by reference.
[0115] At ieas- one of the opiieai properties of an aerial image may be controlled fey bending the patterning device MA and/or by comissltkse: the position of the substraie holder 202. In cm embodiment, field curvature is at least partially compensated by bending the patterning device MA. Additionally or alternatively, mter-field overlay error·-: stsd/or iow order components of intra-field overlay error··: are at least partially compensated by controlling tlte position of the substrate holder 202 during exposure. With these compensations, bettor imaging quality would be achieved: In other worde, better overall productivity would be achieved while simultaneously qualifying for a sufficient imaging quality required for manufacturing fCs , [0116] in an embodiment, the control unit creates a combined distortion map by combining for synthesizing} a hue distortion map and a coarse distortion map, both of which contain infotmatton about in-plane deformation of the substrate W‘, Addit ionally oraltomntiveiy. bused os tho fisx: distort ion map and/or she coenbincd distortion map. the control unit compensates for in-plane deformation of the substrate W by controlling rhe position of the substrate holder >02. a« optical property of an aerial image, and/or an optical property of she projection sysSero PS. By operating the lithographic apparatus in such ; way, a certain imaging quality requirement Mg-. so os'erlay requirement s, e.g. for a specific node, can be satisfied. In contrast, when compensating for in-piane deformation of the substrate W, based on the- coarse distortion map only, the same certain imaging quality requiretnent may not be satisfied.
[0117] hi an embodiment, a fine distortion map artd/or a combined dlstortso : strap stray be used to calibrate, update and/or improve a simulation model that predicts an aerial image and/or a pattern created on the substrate. Additionally or alternatively, multiple fine distortion maps and/or multiple combined distortion maps may be used to calibrate, update attd/or improve a simulation model. For example, a first fine distortion map (and/or a first combined distortion map;, which provides information about la-plane deformation of the first substrate Wild, and tt second fine distortion map (and/or a second combined distortion map), which provides information about in-plane deformation of the second substrate W2L), may be used as a set of measurement data obtained at di if ereni points of time during operation of an exposure apparatus for exposing a lot of wafers. This set of measurement data may be used to calibrate, update and/or improve a simulation moties that, predicts an aerial itTutge and/or a pattern created on the substrate as a function of time. For example, such a simulation model may predict how an aerial image (and/or a pattern mated ott the substrate) is affected by temperature changes (over timet of the patterning device MA, optical elements in the projection system PS, and/or the substrate holder 202. Comparing the set of simulations and the set of measurement data obtained at different points of tires, the accuracy of the si mutation model may be improved. In addition to these snuitipic fine distortion maps (and/or multiple combined distortion maps), other type:; of measurement data ranch as temperaiore of purging gas. the patterning device .MA, optical clemente 1st the projection system PS. and/or the substrate holder 202) may be used to calibrate, update attd/or improve site. stmuiaïiott model. If a simulation model can bo calibrated, updated and/or improved based on mensuieosei·!. date obtained doting production of ICs (i.e., during en uptime of an exposure apparatus); better ovem!; productivity can be achieved comparing to a method of ctdihratittg, updating and/or improving the simulation model that is based on an offline test exposure using a test reticle (he., during a downtime of an exposure apparatus).
2b [8448] Aberrations srtay be described in terms of the Zeraike polynomials. Aberrations may he described, in terms of a set of trigonometric ftnrcisons. Types of aberrations ratty be categorized into i-tfd order components anil even-order components. e.g., based on she characteristics of she Zeraike polynomials and/or the set of trigonometric functions. For example. Zernilte terms described by a sine function may be referred to a:; odd-order components. Zemike terms described by a cosine function may be
2S referred to as even-order components. Aberrations caused by a tatnperatore change (e.g., heating or cooling) of optical elements in the project:»» system FS may be referred to as 'henna) aberrations.
[01191 in art embodiment, at least one of the even-order components of aberrations Is controlled by a de loanable mirror in the protecriott system PS. Additionally or alternatively,, at least one tri the odd-order components of aberrations is corarolled by a deformable mirror In the projection system PS, Additionally or
3(5 alternatively. thermal aberrations are at least partially compensated by a deformable minor in the projection system FS, .Additionally or aherrttte vsly, at ieasr one of the odd-order components of aberrations is controlled by actuating the position atscZor orientetton of optical elements (with respect to the lens barrel, with tespesi it; the path of the radiation boa·;·; B, yr svith respect to the optical axis of the projection sysaetït FS ƒ during exposure, during scanning attd/or during stepping. By operating the lithographic apparatus in such a way, better imaging quality can be achieved, [8128 j The movement device 230 may be arranged to transports the subattute W from the fusther substrate holder 702 to the substrate holder 202 Ute movement device 238 s«ay comprise a robotic atm and/or a wafer handler. The movement device 230 may comprise a gripper to contact a bottom side of the substrate W. The movement device 238 may comprise a Bcrnouifii chuck to hold of the substrate W at file top surface of the substrate W, An gas film between the top surface of the substtate W and the Beroooiib chuck prevents physical eoutac· between the substrate W and the Bernouiiii chuck. A Bernoulli chuck it; described m the PCTsipplicaiion publication No, WO 20 i 3/ 10Ö283A2, hereby incorporated by reference. Part of the movement device .230 may fee implemented as lifting pin:; to Ilfs the substrate W from die subsStaSe holder 202, The lifting pins may lilt the substrate W from site substrate holder 202 tar enough so provide a space between the substrate W and the substrate holder 2Ö2, such that the movement device 238 can provide s gripper beneath the substrate W to lib. the substrate W ft am the lifting pins.
[81211 In an embodiment, the lithographic apparatus may comprise a liquid handling system configured to supply nnd confine the immersion liquid to a space defined between the projection system FS and at least one of the substrate holder 202, the substrate W, atid the sensor holder 206, A lithographic apparatus that comprises a liquid handling systesn rnay be referred to as an immersion lithographic apparatus, an immersion exposure apparatus. or an immersion scanner. When the sensor holder 206 is located beneath the projection system FS ns depicted =n Figure IDCk the liquid handling system tony supply and confuse the immersion liquid to the space defined between the projection system FS and the sensor holder 206. At a different poiti of time during operation of the. immersion exposure apparatus, e.g., during exposure, when the substrate holder 2.02 is located beneath the projection system FS as depleted in Fisntc 9 and Figure 115.0, die liquid handling system may supply artd confine she immersion liquid to the space defined between she projection system FS and the substrate W (and/or to the space defined between the projection system PS anti the substrate holder 2(12).
[0.122j if; an embodiment, the liquid handling system comprises a supply port, which is capable of supply)sty the immersion liquid to the space defined between the projection system PS and the substrate W tor defined between the projection system FS and the substrate holder 202, nr defined between the projection system PS and the sensor holder 2065. The liquid handling system further comprises a recovery port, which Is capable of recovering she liquid from the space. A porous member, winch has a plurality of holes b.e,, openings or pore.:;), may be disposed in the recovery porr. The porous member may. e.g,, foe a rnesh plats wherein numerous; stnaii hose:; are foiïoed in a mesh. Au example of such n. liquid handling system is disclosed in the PCT-applicauon publication No. WÖ 2810/818S23A1, which is hereby incorporated by reference in its entirely, [012,31 Additionally or idtematively_: the hquid handling system comprises an nctoalabie flow plate.
which is c<:-s:ii: isred to be indepcaden-lv possiifsn-eoBis’iibed with tx-sptroi to the projccitoii syston; PS and/or with respect to the substrate holder 2ÖX1« general, there can be a trade-off between a higher speed/aceeieration (of the stepping and/ot scanning motions of she substrate holder 202) and a stability of meniscus' of the confined immersion liquid, in other words, the higher speed/acceleraticr· of the. stepping
S snd/or scanning motions of the substrate holder 202 improves a throughput performance of the immersion exposure apparatus, but if also means that the relative velocity/acceletalion between the liquid handling system and the substrate W (and/or the substrate holder 202i are higher. The higher relative velocity/acceierafion can make the meniscus more unstable: furthermore, unstable meniscus can cause delect problems stech us leakage of the immersion liquid and generation of droplets on she surface of the substrate holder 202. tlx: simstrate W. noti/ru the senses bidder 206. These defect problems east deteriorate the uptime performance of the immersion exposure apparatus. In case these defect problems are prevented by reducing the spced/acccleration of the stepping and/or scanning motions of the substrate holder 202 I.e., by exposing the subslrate W at tower scats speed, so;:·; uctselerotli!!:, «;:d stepping acceleration . the throughput performance of the immersion exposure apparatus will be deteriorated. Hence, this trade-off can
IS also he recognized as a trade-off between a througiipu: performance and an uptime performance, which deteriorate:; an overnl! productivity of the is::;:sei sics;; expo-sort-: apparatus, is: order to prevent these potential defect problems, the control unit may drive (orcontrol a peridot; of; the substrate htsider 202 anrl/ct the actuatabie flow plate to reduce, the relative velocity and acceleration between the actuatabie flow plate and she substrate W (and/or the substrate holder 202;. By controlling the substrate holder 202 and/or the actuatable How plats such a manner Ox., by reducing the relative veiocrty/seccleration between the actuatabie flow plate and the substrate W without reducing the scan speed, scan acceleration, and/or stepping iicccktraiios:). leakage of the immersion liquid during exposure tduring the stepping asid/ur scanning motions of the substrate holder 202; may be prevented, and/or it may be ensured that the immersion liquid remains confined 11- the space defined between the projection system PS and the substrate
2S W fand/or in the space defined between the projection system PS and the substrate holder 202). Therefore, bettor overall productivity bo achieved. Art example of a liquid handling system, winch cats be used sn the cotttexi of this embodiment, is disclosed in Japanese patent application publication No, JP 2014-1.20695,6, which is hereby incorporated by reference Is: its entirety, [0124] In an embodiment, the substrate holder 202 and the sensor holder 206 may be arranged to move in -susses; is: order to transfer the immersion hquid from the substrate holder 202 (and/or the substrate W) >o the sensor bidder 206 (and vice veis-a). During -he move, in nr-ison, the substrate holder 202 and ike sensor holder 206 may be in contact with each other or separated from each other by a gap Oust is sufficiently sroiili fo prevent leakage of the irntnersion kqsud.
f(H25] to an embodiment, each of the substrate holder 202 and the sensor holder 206 has Its own mover 204. The substrate holder 202 has a mover to move the substrate holder 202 relative to the ptojeeiion sy-ifem PS. The sensor holder 206 bas a further mover to move the sensor heldor 206 relative to the ptojection system PS, The ««over and/or the further mover may comprise a planar;motor to move on both ihe x-direction and the y-direction. The planar motor may be a moving magnet type planar mots·;·, which Isas magnets and electrical coils. The magnet:: rtsay he arranged cm she snbsirare bolder 292 and/or on Ihe sensor holder 206, whereas Ihe electrical coils are stationary. Additionally or alternatively. the further mover may comprise two stacked linear motors and may be arranged in an H-dri ve-an-angemenl. In an embodiment, the substrate holder 2.92 and she other substrate holder 212 an! each moved by a planar motor, whereas ihe sensor holder 296 Is moved by two stacked linear motors and may be arranged in an H-drive-arrangement ht an embodiment, the substrate holder 292, the other substrate holder 212 and the sensor holder 296 are each moved by linear motots atraneed in art H -drive-arrangernetit.
(1)}26] Although specific reference may he made in this text to the use of lithographic apparatus in the manufacture olTCs. it should he understood that the lithographic apparatus described herein may have other applications, such as the manufacture of integrated optical systems, guidance and detection patterns for magnetic domain memories. flat-panel displays. hqtsld-eryxta; display;; (LCDs), thin-film magnetic heads, etc. The skilled artisan will appreciate that, in the contest of such alternative applications, arty use of ihe terms “wafer’ or “die herein may be eensideted as synonymous with the more genet ai terms “substrate'’ or ‘Target porlion, respectively. The substrate W referred to herein may be processed, before or after exposure, in for example a track <a tool that typically applies a layer of resist to a substrate and develops ihe exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to snelt and other subsirate processing tools. Further, die subsirate W may be processed more than once, for example in order to create a multi-layer 1C. so that the term substrate W used herein may also refer to a substrate that already contains multiple processed layer·;.
[9127] Although specific reference may have been made above to the· use of embodiments of the
2S invention in the context of optical lithography, it will he appreciated that, the invention may be used in oflicr applications, for example imprint lithography and e-bsam lithography, and where the context allows, is not limitsd to optical Itlhography. fo imprint lithography .a topography m a pthlertting device MA defines ihe pattern created on a substrate. The topography of the patterning device may be pressed into s layer of resist supplied to the substrate whereupon the resist ts cured by applying eieclretmagnetle radiation, heal., pressure or a combination iheteof. The patterning device ,Ma Is moved oui of the resist leaving a pattern in it after the resist is cured.
[0128] While .specific embodiments of tee invention have been described assove, j; wiii be appreciated that die invention may be practiced otherwise than as described. For example, the invention may take Ihe form of a computer program containing one os^- more setpiences of machine -readable instructions describing a methtxl as disclosed above. < ' a data storage aieiilnsn (e g ststnicondnctor memory, magnetic or optical disk) having such & computer program stored therein.
(ÖJ29J The descriptions above, are intended io be iiiustrarive, no! limiting. Thu:;, it will be apparent to one skilled io tbe art that modifications may be made to tbe invention as described without departing from tbe scope of the clauses set out below. Other aspects of the invention are set out as in the following numbered clauses:
1. An exposure apparatus comprising;
a substrate holder for holding a substrate: a sensor holder for holding a sensor; and a mover arranged for moving the substrate holder wherein the mover is arranged to couple with tbe sensor holder io a lust situation so as to move the sensor bolder.
wherein tbe mover is anattged to decouple from the sensor holder in a second sifostion so as so move without moving the sensor holder.
2. The exposure apparatus of clause I, comprising sn exchange mechanism for providing the sensor holder io tbe mover and for removing rite sensor bolder from rise mover.
The exposure apparatus of clause 1 or 2, wherein trie mover is arranged to move a further substrate holder for holdirss: a further substrate, wherein a size of the further substrate is different, from a size, of the
2Q substrate,
4. The exposure apparatus of clause 3, wherein the sensor holder has a length and a width, whereto the length substantially equals a size of the substrate¹ holder, wherein the width substantially equals a size of she fortber substrate bolder, wherein tbe length and the width are different from each other.
5, The exposure apparatus of clause 3 or 4, wherein she mover is arranged to support tbe sensor holder ire « fust orientation and =n a second orientation.
whiitein, in foe fires. orientation, the sensor bolder hits a first angle along an axis perpendicular to a horizontal prime, whereirt, irt the second orientation, the sensor bottler bits a second angle along the axis perpendicular to the horizontal plans, wherein the first angle Is different front the second angle.
6, The exposure apparatus of one of ths preceding clauses, wherein the substrate holder and the sensor holder are arranged to move m unison relative to the mover in the first Situation.
7, The exposure apparatus of clause 6. comprising a nozzle for providing a liquid to one of a top 5 surface of the substrate holder and a top surface of the sensor holder, where-n the exposure apparatus is anatigsd to transfer the liquid from the one of the top surface of the substrate holder and the top surface of she sensor holder to the ether of the Sop surface of the substrate bolder and the lop surface of ihe. sensor holder while the substrate holder and the sensor holder move in unison relative to the mover,
8. The exposure apparatus of one of clauses; I -5. wherein the mover is arranged to decouple wish the substrate holder in the first situation so as to move without moving the substrate holder.
9. The exposure apparatus of one of the preceding clauses, wherein ihe sensor holder Is arranged to receive a radiation beam from the substrate holder,
10. The exposure apparatus of clause 9, witetein dte substrate holder comprises a murker, wherein the radiation beam comprises information about an ienage projected on the marker.
11. The exposure apparatus of clause 9' or IO, wherein the sensor helder is arraetged to propagate she 20 radiation beam to a detector, whereto the sensor bolder is movable relative to she detector i 2.. The exposure apparatus of one of the preceding clauses, comprising an exposure device, stud a srssariisesrserst device, whereist she exposure device is arranged to expose the substrate with an exposure beam, wherein the measurement device is arranged to provide measurement information of ihe substrate.
wherein the exposure device and the measurement device ate distant to each other, wherein the mover ss arranged ts; support die substrate holder while, near the exposure device.
13. The exposure apparatus of clause 12. comprisitig a stationary support arranged to support the substrate holder withe sear the measurement device.
14. The exposure apparatus of clause 13, comprising a flrr:; encoder head and a first scale, wherein the stationary support comprises a recess for bidding the first encoder head, whereto the first settle is arranged at a bottom surface of the substrate holder, wherein the first encoder head faces the first scale while ihe vabsifute honk'·· k. near the measurement ik-: vice and is arranged to provide a signal represeisSa-ive of positional information of the substrate holder.
15. The exposure apparatus of clause 14. wherein the fitst encoder hetscl is coupled to the stationary 5 support via a dynamical isolator.
16. The exposure apparatus of one of clauses 12-15. coirtprisitsg a. movement device arranged to move the substrate holder while supported by the stationary support,
17. The exposure apparatus of one of clauses 12-16, comprising a frame for supporting the exposure device, wherein the exposure device is movable relative to the frame.
18. The exposure apparatus of one of clauses 12 i , comprising a further measurement device arranged to provide furl.her measurement information of the substrate. wherein the further measurement
1§ device is closer to fhe exposure device than the measurement device,
19. The exposure apparatus of ore of the preceding clauses, comprising a second encoder, wherein the second encoder head is arranged to face the f-rst scale so as to provide a second s-igoal representative of positional information of «lie substrate holder.
20. The exposure apparatus cf one of the preceding clauses, comp rising a i hist- encoder bend and a third scale, wherein the third scale is arranged at a bottom side of the sensor holder, wherein the third encoder head k arranged to face the third scale, so as to provide a thins signal representative of positional infonnation of the sensor holder.
i. An exposure apparatus comprising, a substrate holder for holding a substrate; a sensor holder for holding a sensor, a mover arranged for moving the substrate holder; anti a projection system arranged to provide a beam of radiation onto the substrate, wherein during exposure, she projection system provide^ tbs beam of radiation onto the substrate whett the sensor holder is decoupled from the mover.
wherein the mover couples with the sensor holder when the sensor measures a property of the projection system or the radiation beam.
22. The exposure apparatus of clause 21. comprising ;m exchange mechanism lor providing the sensor holder io the mover and for removing the sensor holder from the mover.
23. The exposure apparatus of clause 21 or 22. wherein the mover is arranged io move a further substrate holder lor framing a further substrate, where! o a size of die further substrate ts different from a size of the snhsitrate.
24. The exposure apparatus of clause 23. wherein ihe sensor holder has a length and a width, wherein the length substantially equals a sore of she substrate holder, wherein the width stib-iUm-ially equals a size of the fertile!· substrate holder, wherein the length and the width are different from taels tithes^-.
25. Use exposure apparatus of clause 23 or 24, wherein the mover is arranged to support the sensor holder io a fm;> oritmralion and lit a second orie-mition.
wherein, in the first orientation, ihe sensor holder has a first angle aiostg an axis perpendicular to a horizontal plane, wherein, in the second orientation, the sensor holder has a second angle along the axis perpendicular to the horizontal plane, wherein the first angle is different from the. second angle.
26. The exposure apparatus of one of clauses 21-25. wherein the mover is arranged to decouple from the substrate holder so as to move without moving tbs substrate bolder.
27. Tits exposure apparatus of one of clauses 21-26. wherein the sensor holder is arranged to receive tftc radiation beam from the substrate holder.
28. The exposure apparatus of clauses 27. wherein the substrate holder comprises a rantker, wherein tlte radiation beam composes information about on image projected on the marker,
29. The exposure apparatus of clauses 27 or 28, wherein the sensor holder is arranged to propagate the radiation beam to a detector, wherein the sensor holder is movable relative to the detector.
20. The exposure apparatus of one clauses 21 -29. comprising an exposure device and a measurement device, wherein the exposure device is arranged so expose the substrate with an exposure beam, wherein she -rteasure-ïteut device is arranged to provide measurement information of the substrate, wherein the exposure device and she measurement device are dist east to each other, wherein she mover is arranged o rapport ihe substrate holder while near the exposure device.
.31. The exposure apparatus of clause 30, comprising a stationary support arranged to support the substrate holder while near the merviutemem device.
32. The exposure apparatus of clause 31, comprising a first encoder heed and a first scale, wherein the stationary support comprises a recess for holding the first encoder head, wherein the first scale is arranged at a bottom surface of the sitbttrtutc holder, wherein the first encoder head faces she first scale while the substrate. holder ts «ear the mousuremcRt device anti is arranged io provide a signal representative of positional information of the substrate holder.
33. The exposure apparatus of clause 32, wherein the first encoder head is coupled to the stationary support, via a dynamical isolator.
34. Tiis exposure apparatus of or»e of clauses 31 -33, comprising a mos'emenl device arranged to move the substrate holder white supported by the stationary support.
33. The exposure apparatus of one ofclauses 31-34, comprising a frame for supporting the exposure device, wherein the exposure device Is movable relative to the frame.
36. The exposure apparatus of one of clauses 31 -38, comprising a further measurement device arranged to provide further measurement information of the substrate, wherein the further measurement device is closer to the exposure device than the measurement device, as
32. The exposure apparatus of one of clauses 31-36, comprising a second encoder head, wherein the second encoder bead is snanged to face the first scale so as to orc-vids a second signal representative of positional information of the substrate holder.
SO 38, The exposure apparatus of one of clauses 31 -37. comprising a third encoder betid at id a rime! settle, wherein the third scale is ttirtsueeb at a bni-om side of the sensor holder, wherein the third encoder bend is arrange to face the third scale, so as io provide a third signal representative of positional information of the sensor holder.
29. Au exposure apparatus comprising:
a first substrate holder for holding a first substrate;
a second substra-e holder for holding a second substrate*.
a projection system for exposing the first substrate with an exposure beam;
a measurement device arranged to provide measurement information of die second substrate;
a further measurement device arranged to provide measurement information of the first substrate, wherein the further measurement device is closer to the projection system than the measurement device.
40. The exposure apparatus of clause 39, wherein the further measurement information of the first substrate comprises a height profile and/or an iu-piaue deformation of the first substrate.
41. The: exposure apparatus of clauses 39 -40, wheteit- the measurement device is configured to provide information about the positions of substrate alignment marks on the second substrate.
42. The exposate apparatus of one of clauses 39--4 i. comprising a. sensor bolder for bolding a sensor, and a mover for moving She substrate holder relative to the projection system.
wherein the sensor is arranged to measure a property of the exposure beam or the projection
SÏ5 system.
43. The exposure apparatus of clause 42, wherein the further measurement device is arranged to acquire the measurement laformatiun of the first substrate while the sensor is measuring the property of the exposure beans,
2S
44. The. exposure apparatus of one clauses 39-42, the lithographic apparatas is atransod -«transpor- she first substrate from the first substrate holder to the second substrate holder, wherein the measurement device arranged to provide measurement information of die first substrate,
45. The exposure apparatus of one of clauses 39-44, wherein the measurement device is arranged to acquire the measurement infortm-iton of the second subsi rate when the second substrate holder is a; the first position, wherein the fur-het measurement device is arranged to acquire the measurement information of the second substrate when the second substrate holder is at the second position,
46. T'he exposure apparatus of one of clause's 39-4.5. whereto the further measurement device is arranged propagate a plurality of measurement beams on the first substrate simultantxsusly.
47. The exposure apparatus of one of clauses 39-46, comprising a control unit arranged to drive the ftssi substrate holder and the second substrate holder based on the n-edsureutent information of the first substrate anti measurement in tomtit tiert of the second substrate.
-'to, The exposare apparatus of oae of clauses 39-9-7,, wherein the firth substrate is provided with a first alignment snark, wherein the further measurement device Is arranged to provide -he measurement information of toe first substrate based on a position of the second alignment merk,
49. The exposure apparatus of one of clauses 39-4g, wherein ihe second substrate is provided w-th a second alignment mark, wherein the measurement device is arranged to provide the measurement information of the second substrate based on a position of tits second alignment mark. Other aspects of the invention are set out as its the following numbered clauses:
5. Au exposure apparatus comprising:
a first substrate holder configuted lo hold a substrate; a second substrate holder configured to hold the substrate; a sensor helder configured to hold a sensor;
a projection system configured io expose the substrate wtth an exposure beam;
a measurement device configured to provide measurement information of the substrate: a further measurereteitt device configured st> provide further measurement totormattoit of the substrate, wherein the sensor st: configured so measure a property of the exposure beam and/or the projection system, wherem the projection system ss configured to expose ihe sensor wish the exposure beam.
2, The exposure apparatus of clause I, wherein the exposure apparatus is arranged to hold the substrate on the firsi substrate holder while the measurement device is acquiring the measurement information of the stibsfrate, and wherein the exposure apparatus is arranged to hold the substrate or the second substrate holder while the further measurement device is atiquirjag the further measurement information of the substrate.
3. 'The exposure apparatus according so clause 1 or 2, wherein nt least one of the mvESsuremesst device and she further resasursresnt device is configured to provide sufofuxttion about a deformation of the substrate,
4. The exposure apparatus according to any one of (he preceding clauses, wherein the ineasuremenl device ss located further away from the projection system than the farther measurement device.
5. Tits exposure apparatus according to any one of the preceding clauses, where-.n Use further measurement device composes a levelling sensor system con figured to provide a beam of rtstlhtiiots nt a
1C slanted angle with the substrate ;tnd configured to provide bstbs’tstttlton about a llatness of the substrate.
6. 'The exposure apparatus according io any one of the preceding claores, wherein at least one of the measurement device and the: further measurement device, comprises an siiignsneni sensor configsjred to measure positions of substrate alignment marks on the substrate.
1S , The exposure apparatus of one of clause 6, wherein the measurement device is configured to provide fine aiigntnent information based on measurement of the substrate alignment marks, wherein the further measurement device is configured to provide coarse ttlisnoten; information based on measurement:; of the substrate alignnset·} resiles, wherein she exposure apparatus comprises a control unit configured to create a. fine distortion map based on ihe fins alignment information, to create a coarse disionion snap based on the coarse alignment mionnafiors, and to create a combines! distortion trsap by combining she first: dsvsoriiuts map and the coarse distortion map.
2S S. The exposure apparats.tr· according to clause 7, cosnpt insits a sirsnritd sots model otsui'sgnsesl to predict ; pattern creistcsi on the substrate by she exposure ix-am, wherein the control tsust is configured to calibrate or update the simulation model. bared on she fire; distortion reap astd/or the combined distorts on map.
9. 'Tbc ex pornte apparatus stcordmg to clause or <i. wherein the control unit ;s configured to control an csptica! property of the projection system, based os the fine distortion map and/or the combi tied distortion map.
10. The exposure apparatus according, to any of She preceding clauses, wherein the exposure apparatus comprises:
a support stix;eturc configured to bold a patterning device, wherein the patterning device is configured to impart it pattern into the exposure beaut so as to image the pattern onto the substrate, wherein the support structure is configured to actively bend the patterning device,
S I I, The exposure apparatus according to any of the preceding clauses, wherein the projection system comprises: a lens barrel:
;tn optical dement: and ;; lens holder configured to hold the optical element, wherein the lests holder comprises an actuator to control the position and/or orientation of the optical dement with respect to the lens band.
i 2. The exposure apparatus according to any of the preceding disuse.;-:, comprising a liquid handling systvtri configured to supply anti cocs/ine immersion liquid to a space defined between Ihe projection system
IS and at least one of the first substrate bolder, t he second substrate holder, the substrate, and the sensor holder.
i 3. The exposure apparatus of clause i 2, wherein the liquid handling system comprises a recovery port configured to recover the immersion liquid from the space, wherein a porous member is disposed In the recover)' port,
14, The exposure apparatus according to atty of the preceding clauses, wherein the projection system comprises a deformable mirror.
15. The exposure apparatus according io any of the preceding clauses. wherein Site property of the exposure beam is af least one of a dose, an aberration and an oni forms ty.

权利要求:
Claims (1)
[1]
A lithography device comprising: an exposure device adapted to provide a radiation beam; a carrier constructed to support a patterning device, the patterning device being capable of applying a pattern in a section of the radiation beam to form a patterned radiation beam; a substrate table constructed to support a substrate; and a projection device adapted to project the patterned radiation beam onto a target area of the substrate, characterized in that the substrate table is adapted to position the target area of the substrate in a focal plane of the projection device.

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法律状态:

优先权:

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申请号 | 申请日 | 专利标题

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EP17154551|2017-02-03|

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EP17169025|2017-05-02|

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EP17193990|2017-09-29|

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EP17201092|2017-11-10|

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